Kim Hankook, Bonsu Richard O, O'Donohue Christopher, Korotkov Roman Y, McElwee-White Lisa, Anderson Timothy J
Department of Chemical Engineering, University of Florida , Gainesville, Florida 32611-6005, United States.
ACS Appl Mater Interfaces. 2015 Feb 4;7(4):2660-7. doi: 10.1021/am507706e. Epub 2015 Jan 23.
Aerosol-assisted chemical vapor deposition (AACVD) of WOx was demonstrated using the oxo tungsten(VI) fluoroalkoxide single-source precursors, WO[OCCH3(CF3)2]4 and WO[OC(CH3)2CF3]4. Substoichiometric amorphous tungsten oxide thin films were grown on indium tin oxide (ITO) substrates in nitrogen at low deposition temperature (100-250 °C). At growth temperatures above 300 °C, the W18O49 monoclinic crystalline phase was observed. The surface morphology and roughness, visible light transmittance, electrical conductivity, and work function of the tungsten oxide materials are reported. The solvent and carrier gas minimally affected surface morphology and composition at low deposition temperature; however, material crystallinity varied with solvent choice at higher temperatures. The work function of the tungsten oxide thin films grown between 150 and 250 °C was determined to be in the range 5.0 to 5.7 eV, according to ultraviolet photoelectron spectroscopy (UPS).
使用含氧钨（VI）氟代醇盐单源前驱体WO[OCCH3(CF3)2]4和WO[OC(CH3)2CF3]4展示了WOx的气溶胶辅助化学气相沉积（AACVD）。亚化学计量的非晶态氧化钨薄膜在低沉积温度（100 - 250°C）的氮气氛围中生长在氧化铟锡（ITO）衬底上。在高于300°C的生长温度下，观察到W18O49单斜晶相。报道了氧化钨材料的表面形貌和粗糙度、可见光透射率、电导率以及功函数。在低沉积温度下，溶剂和载气对表面形貌和组成的影响最小；然而，在较高温度下，材料的结晶度随溶剂选择而变化。根据紫外光电子能谱（UPS），在150至250°C之间生长的氧化钨薄膜的功函数确定在5.0至5.7 eV范围内。
