Yoon Ju-Heon, Park Jong-Keuk, Kim Won Mok, Lee JinWoo, Pak Hisun, Jeong Jeung-Hyun
Korea Institute of Science and Technology (KIST), Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791, Korea.
LG Innotek R&D Center, 55, Hanyang Daehak-ro, Sanggrok-gu, Ansan, Gyeonggi, 426-791, Korea.
Sci Rep. 2015 Jan 9;5:7690. doi: 10.1038/srep07690.
The cell-to-module efficiency gap in Cu(In,Ga)Se2 (CIGS) monolithically integrated solar modules is enhanced by contact resistance between the Al-doped ZnO (AZO) and Mo back contact layers, the P2 contact, which connects adjacent cells. The present work evaluated the P2 contact resistance, in addition to the TCO resistance, using an embedded transmission line structure in a commercial-grade module without using special sample fabrication methods. The AZO layers between cells were not scribed; instead, the CIGS/CdS/i-ZnO/AZO device was patterned in a long stripe to permit measurement of the Mo electrode pair resistance over current paths through two P2 contacts (Mo/AZO) and along the AZO layer. The intercept and slope of the resistance as a function of the electrode interval yielded the P2 contact resistance and the TCO resistance, respectively. Calibration of the parasitic resistances is discussed as a method of improving the measurement accuracy. The contribution of the P2 contact resistance to the series resistance was comparable to that of the TCO resistance, and its origin was attributed to remnant MoSe2 phases in the P2 region, as verified by transmission electron microscopy.
铜铟镓硒（CIGS）单片集成太阳能模块中的电池到模块效率差距，因连接相邻电池的P2接触（即铝掺杂氧化锌（AZO）与钼背接触层之间的接触电阻）而增大。本研究除了评估透明导电氧化物（TCO）电阻外，还在商用级模块中采用嵌入式传输线结构，而不使用特殊的样品制备方法，来评估P2接触电阻。电池之间的AZO层未进行刻划；相反，CIGS/CdS/i-ZnO/AZO器件被制作成长条形图案，以便测量通过两个P2接触（钼/AZO）并沿AZO层的电流路径上的钼电极对电阻。电阻与电极间距函数关系的截距和斜率分别得出P2接触电阻和TCO电阻。讨论了寄生电阻的校准，作为提高测量精度的一种方法。P2接触电阻对串联电阻的贡献与TCO电阻相当，其来源归因于P2区域中的残余MoSe2相，这已通过透射电子显微镜得到验证。
