Nam Woongsik, Mitchell James I, Ye Peide D, Xu Xianfan
School of Mechanical Engineering, Purdue University, West Lafayette, IN 47907, USA. Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA.
Nanotechnology. 2015 Feb 6;26(5):055306. doi: 10.1088/0957-4484/26/5/055306. Epub 2015 Jan 15.
We demonstrate a single-step, laser-based technique to fabricate silicon nanowire field effect transistors. Boron-doped silicon nanowires are synthesized using a laser-direct-write chemical vapor deposition process, which can produce nanowires as small as 60 nm, far below the diffraction limit of the laser wavelength of 395 nm. In addition, the method has the advantages of in situ doping, catalyst-free growth, and precise control of nanowire position, orientation, and length. Silicon nanowires are directly fabricated on an insulating surface and ready for subsequent device fabrication without the need for transfer and alignment, thus greatly simplifying device fabrication processes. Schottky barrier nanowire field effect transistors with a back-gate configuration are fabricated from the laser-direct-written Si nanowires and electrically characterized.
我们展示了一种基于激光的单步技术来制造硅纳米线场效应晶体管。使用激光直写化学气相沉积工艺合成硼掺杂硅纳米线，该工艺可生产小至60 nm的纳米线，远低于395 nm激光波长的衍射极限。此外，该方法具有原位掺杂、无催化剂生长以及对纳米线位置、取向和长度进行精确控制的优点。硅纳米线直接在绝缘表面上制造，无需转移和对准即可进行后续器件制造，从而大大简化了器件制造工艺。采用背栅配置的肖特基势垒纳米线场效应晶体管由激光直写的硅纳米线制成并进行电学表征。
