Ilas Simon, Loiseau Pascal, Aka Gérard, Taira Takunori
Opt Express. 2014 Dec 1;22(24):30325-32. doi: 10.1364/OE.22.030325.
We report the fourth harmonic generation at 266 nm using a type I YAl3(BO3)4 (YAB) single crystal from a Q-switch microchip laser Nd:YAG/Cr⁴⁺:YAG frequency doubled with a LiB3O5 (LBO) crystal. 240 kW peak power at 266 nm corresponding to a mean conversion efficiency of 12.2% from 532 to 266 nm has been obtained with a 2.94 mm thick YAB crystal. The influences of optical homogeneity and absorption on the conversion efficiency are discussed.
我们报道了利用一块I型YAl3(BO3)4(YAB)单晶,通过Q开关微芯片激光器Nd:YAG/Cr⁴⁺:YAG与LiB3O5(LBO)晶体倍频产生266 nm的四谐波。使用一块2.94 mm厚的YAB晶体,在266 nm处获得了240 kW的峰值功率,对应于从532 nm到266 nm的平均转换效率为12.2%。讨论了光学均匀性和吸收对转换效率的影响。