来自被动调Q Nd:YAG/Cr4+:YAG微芯片激光器的532纳米波长下6兆瓦的峰值功率。

> 6 MW peak power at 532 nm from passively Q-switched Nd:YAG/Cr4+:YAG microchip laser.

作者信息

Bhandari Rakesh, Taira Takunori

机构信息

Institute for Molecular Science, Laser Research Center, 38 Nishigonaka, Myodaiji, Okazaki 444-8585, Japan.

出版信息

Opt Express. 2011 Sep 26;19(20):19135-41. doi: 10.1364/OE.19.019135.

DOI:10.1364/OE.19.019135

PMID:21996855

Abstract

Megawatt peak power, giant pulse microchip lasers are attractive for wavelength conversion, provided their output is linearly polarized. We use a [110] cut Cr(4+):YAG for passively Q-switched Nd:YAG microchip laser to obtain a stable, linearly polarized output. Further, we optimize the conditions for second harmonic generation at 532 nm wavelength to achieve > 6 MW peak power, 1.7 mJ, 265 ps, 100 Hz pulses with a conversion efficiency of 85%.

摘要

兆瓦级峰值功率的巨脉冲微芯片激光器，若其输出为线偏振，则在波长转换方面具有吸引力。我们使用[110]切割的Cr(4+):YAG对被动调Q的Nd:YAG微芯片激光器进行操作，以获得稳定的线偏振输出。此外，我们优化了532纳米波长的二次谐波产生条件，以实现峰值功率>6兆瓦、能量1.7毫焦、脉宽265皮秒、重复频率100赫兹的脉冲，转换效率达85%。