在透射电子显微镜中实现相变锗锑碲的结构/化学协同剪裁
Toward structural/chemical cotailoring of phase-change Ge-Sb-Te in a transmission electron microscope.
作者信息
Zhang W, Kim J-G, Zheng W T, Cui X Q, Kim Y-J, Song S A
机构信息
Department of Materials Science, Key Laboratory of Mobile Materials MOE, State Key Laboratory of Superhard Materials, Jilin University, Changchun, China; Computational and Analytical Science Center, Samsung Advanced Institute of Technology, Yongin, South Korea.
出版信息
J Microsc. 2015 Mar;257(3):253-5. doi: 10.1111/jmi.12216.
Ge2Sb2Te5, as the prototype material for phase-change memory, can be transformed from amorphous phase into nanoscale rocksalt-type GeTe provided with an electron irradiation assisted by heating to 520°C in a 1250 kV transmission electron microscope. This sheds a new light into structural and chemical cotailoring of materials through coupling of thermal and electrical fields.
作为相变存储器的原型材料，在1250 kV透射电子显微镜中加热到520°C并辅以电子辐照的条件下，Ge2Sb2Te5可以从非晶相转变为纳米级岩盐型GeTe。这为通过热场和电场耦合对材料进行结构和化学协同剪裁提供了新的思路。
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