电子束辐照诱导非晶态锗锑碲硫族化物材料的结晶行为。
Electron beam irradiation induced crystallization behavior of amorphous GeSbTe chalcogenide material.
作者信息
An Byeong-Seon
机构信息
School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
出版信息
Appl Microsc. 2019 Dec 17;49(1):17. doi: 10.1186/s42649-019-0021-5.
The crystallization of amorphous GeSbTe phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous GeSbTe film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction.
通过原位透射电子显微镜（TEM）研究了电子束辐照诱导非晶态GeSbTe相变材料的结晶过程。用200keV电子束长时间辐照后，非晶基体转变为部分结晶状态。实时观察表明，在透射电子显微镜中电子束辐照下，非晶GeSbTe薄膜的结晶通过成核和生长机制发生。虽然二维投影存在不确定性，但已观察到晶核优先沿<100>方向生长。
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