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[二氧化硅暴露对迟发性卟啉病发生的影响]

[The effect of exposure to silicon dioxide on the occurrence of porphyria tarda].

作者信息

Hykes P, Kordac V, Havránková E

机构信息

Klinika nemocí z povolání fakulty vseobecného lékarství, Univerzity Karlovy, Praha.

出版信息

Sb Lek. 1989 Sep;91(8-9):249-52.

PMID:2562772
Abstract

The incidence of porphyria cutanea tarda was studied in two groups of silicon dioxide risk workers and compared to that in a control group. In the group with higher exposure to SiO2 the illness occurred in 12 out of 440 workers, in the group with lower exposure in 12 out of 1000 workers. In the control group porphyria was found in 18 out of 12,100 individuals examined. The difference in the incidence of the illness between the SiO2 risk individuals and the control group is statistically significant (p less than 0.01), while the difference between the group with variously high SiO2 exposure is on the level of statistically significance (p less than 0.05). The causes of the higher incidence rate of porphyria cutanea tarda in free SiO2 risk workers are discussed.

摘要

对两组二氧化硅接触风险工人的迟发性皮肤卟啉症发病率进行了研究,并与对照组进行了比较。在二氧化硅接触较高的组中,440名工人中有12人患病;在接触较低的组中,1000名工人中有12人患病。在对照组中,12100名受检个体中有18人发现患有卟啉症。二氧化硅接触风险个体与对照组之间疾病发病率的差异具有统计学意义(p小于0.01),而不同二氧化硅接触水平组之间的差异具有统计学显著性水平(p小于0.05)。讨论了游离二氧化硅接触风险工人中迟发性皮肤卟啉症发病率较高的原因。

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