Das Achintya, Duttagupta Siddhartha P
Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India
Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India.
Radiat Prot Dosimetry. 2015 Dec;167(4):443-52. doi: 10.1093/rpd/ncu369. Epub 2015 Jan 28.
There is a growing requirement of alpha spectroscopy in the fields context of environmental radioactive contamination, nuclear waste management, site decommissioning and decontamination. Although silicon-based alpha-particle detection technology is mature, high leakage current, low displacement threshold and radiation hardness limits the operation of the detector in harsh environments. Silicon carbide (SiC) is considered to be excellent material for radiation detection application due to its high band gap, high displacement threshold and high thermal conductivity. In this report, an alpha-particle-induced electron-hole pair generation model for a reverse-biased n-type SiC Schottky diode has been proposed and verified using technology computer aided design (TCAD) simulations. First, the forward-biased I-V characteristics were studied to determine the diode ideality factor and compared with published experimental data. The ideality factor was found to be in the range of 1.4-1.7 for a corresponding temperature range of 300-500 K. Next, the energy-dependent, alpha-particle-induced EHP generation model parameters were optimised using transport of ions in matter (TRIM) simulation. Finally, the transient pulses generated due to alpha-particle bombardment were analysed for (1) different diode temperatures (300-500 K), (2) different incident alpha-particle energies (1-5 MeV), (3) different reverse bias voltages of the 4H-SiC-based Schottky diode (-50 to -250 V) and (4) different angles of incidence of the alpha particle (0°-70°).The above model can be extended to other (wide band-gap semiconductor) device technologies useful for radiation-sensing application.
在环境放射性污染、核废料管理、场地退役和去污等领域，对α能谱的需求日益增长。尽管基于硅的α粒子检测技术已经成熟，但高漏电流、低位移阈值和辐射硬度限制了探测器在恶劣环境中的运行。碳化硅（SiC）因其宽带隙、高位移阈值和高导热率，被认为是辐射检测应用的理想材料。在本报告中，提出了一种用于反向偏置n型SiC肖特基二极管的α粒子诱导电子 - 空穴对产生模型，并使用技术计算机辅助设计（TCAD）模拟进行了验证。首先，研究了正向偏置的I - V特性以确定二极管理想因子，并与已发表的实验数据进行比较。发现在300 - 500 K的相应温度范围内，理想因子在1.4 - 1.7之间。接下来，使用物质中离子传输（TRIM）模拟优化了能量相关的α粒子诱导电子 - 空穴对产生模型参数。最后，分析了由于α粒子轰击产生的瞬态脉冲，分析内容包括：（1）不同的二极管温度（300 - 500 K），（2）不同的入射α粒子能量（1 - 5 MeV），（3）基于4H - SiC的肖特基二极管的不同反向偏置电压（-50至-250 V），以及（4）α粒子的不同入射角（0° - 70°）。上述模型可扩展到其他适用于辐射传感应用的（宽带隙半导体）器件技术。
