Fantoni A, Martins J, Fernandes M, Louro P, Vygranenko Y, Vieira M
Electronics, Telecommunications and Computer Engineering Department ISEL, Rua Conselheiro Emídio Navarro, 1959-007 Lisboa, Portugal.
J Nanosci Nanotechnol. 2009 Jul;9(7):4028-33. doi: 10.1166/jnn.2009.m06.
The present paper reports the optical properties of multilayer structures composed by p-i-n cells based on a-SiC:H or a-Si:H material. Different structures are studied in order to obtain image sensors that accomplish color filtering in addition to image pattern recognition. A simple theoretical model is developed to explain sensors behavior and to derive the optical-readout experimental procedure. Electrical models for the sensors are established for simulation purposes and to compare photocurrent signals with experimental data. A numerical simulation of the JV characteristic and of the spectral response is also presented in order to show possible future optimization of the device. Two main structures are studied, namely p-i-n/p-i-n and p-i-n/n-i-p tandem cells.
