Pecina Adam, Lepšík Martin, Hnyk Drahomír, Hobza Pavel, Fanfrlík Jindřich
Gilead Sciences and IOCB Research Center and Institute of Organic Chemistry and Biochemistry (IOCB), Academy of Sciences of the Czech Republic, v.v.i. , Flemingovo nám. 2, 16610 Prague 6, Czech Republic.
J Phys Chem A. 2015 Feb 26;119(8):1388-95. doi: 10.1021/jp511101n. Epub 2015 Feb 12.
A systematic quantum mechanical study of σ-hole (chalcogen, pnicogen, and halogen) bonding in neutral experimentally known closo-heteroboranes is performed. Chalcogens and pnicogens are incorporated in the borane cage, whereas halogens are considered as exo-substituents of dicarbaboranes. The chalcogen and pnicogen atoms in the heteroborane cages have partial positive charge and thus more positive σ-holes. Consequently, these heteroboranes form very strong chalcogen and pnicogen bonds. Halogen atoms in dicarbaboranes also have a highly positive σ-hole, but only in the case of C-bonded halogen atoms. In such cases, the halogen bond of heteroboranes is also strong and comparable to halogen bonds in organic compounds with several electron-withdrawing groups being close to the halogen atom involved in the halogen bond.
对中性实验已知的闭式杂硼烷中σ-空穴(硫族元素、氮族元素和卤素)键合进行了系统的量子力学研究。硫族元素和氮族元素被纳入硼烷笼中,而卤素被视为二碳硼烷的外取代基。杂硼烷笼中的硫族元素和氮族元素原子带有部分正电荷,因此具有更正的σ-空穴。因此,这些杂硼烷形成非常强的硫族元素和氮族元素键。二碳硼烷中的卤素原子也有高度正的σ-空穴,但仅在与碳键合的卤素原子的情况下。在这种情况下,杂硼烷的卤素键也很强,并且与有机化合物中的卤素键相当,其中有几个吸电子基团靠近参与卤素键的卤素原子。