Li Zirun, Mi Wenbo, Wang Xiaocha, Zhang Xixiang
Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University , Tianjin 300072, China.
ACS Appl Mater Interfaces. 2015 Feb 18;7(6):3840-5. doi: 10.1021/am509173r. Epub 2015 Feb 9.
Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ'-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ'-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ'-Fe4N layer and interfacial spin scattering.
研究了面对靶反应溅射外延γ'-Fe4N/CoN双层膜的各向异性磁电阻（AMR）。在低温下出现相移和类矩形AMR，这可归因于界面交换耦合。相移源于交换偏置（EB），它使磁化强度滞后于小磁场。当γ'-Fe4N厚度增加时，出现类矩形AMR。类矩形AMR应来自包括EB诱导的单向各向异性、γ'-Fe4N层的本征AMR和界面自旋散射在内的综合贡献。
