GFMC, Universidad Complutense de Madrid, 28040 Madrid, Spain.
Hemholtz-Zentrum Berlin für Materialen und Energie, Albert-Einstein-Strasse 15, 12489 Berlin, Germany.
Phys Rev Lett. 2019 Jan 25;122(3):037601. doi: 10.1103/PhysRevLett.122.037601.
The electronic reconstruction occurring at oxide interfaces may be the source of interesting device concepts for future oxide electronics. Among oxide devices, multiferroic tunnel junctions are being actively investigated as they offer the possibility to modulate the junction current by independently controlling the switching of the magnetization of the electrodes and of the ferroelectric polarization of the barrier. In this Letter, we show that the spin reconstruction at the interfaces of a La_{0.7}Sr_{0.3}MnO_{3}/BaTiO_{3}/La_{0.7}Sr_{0.3}MnO_{3} multiferroic tunnel junction is the origin of a spin filtering functionality that can be turned on and off by reversing the ferroelectric polarization. The ferroelectrically controlled interface spin filter enables a giant electrical modulation of the tunneling magnetoresistance between values of 10% and 1000%, which could inspire device concepts in oxides-based low dissipation spintronics.
在氧化物界面处发生的电子重构可能是未来氧化物电子学中有趣的器件概念的来源。在氧化物器件中，多铁隧道结作为一种具有前景的研究方向，因为它们提供了通过独立控制电极的磁化和势垒的铁电极化的切换来调制结电流的可能性。在这封信件中，我们表明，La_{0.7}Sr_{0.3}MnO_{3}/BaTiO_{3}/La_{0.7}Sr_{0.3}MnO_{3}多铁隧道结界面处的自旋重构是一种自旋过滤功能的起源，通过反转铁电极化可以打开和关闭这种功能。铁电控制的界面自旋滤波器使隧道磁电阻的隧穿发生巨大的电调制，其调制幅度在 10%到 1000%之间，这可能会激发基于氧化物的低功耗自旋电子学的器件概念。
