Sung Sujin, Park Sungjun, Lee Won-June, Son Jongho, Kim Chang-Hyun, Kim Yoonhee, Noh Do Young, Yoon Myung-Han
†School of Materials Science and Engineering and ‡Research Institute for Solar and Sustainable Energies, §Department of Physics and Photon Science, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
ACS Appl Mater Interfaces. 2015 Apr 15;7(14):7456-61. doi: 10.1021/acsami.5b00281. Epub 2015 Apr 1.
In this letter, we report that high-performance insulating films can be generated by judicious control over the microstructure of sol-gel-processed titanium dioxide (TiO2) films, typically known as wide-bandgap semiconductors. The resultant device made of 23 nm-thick TiO2 dielectric layer exhibits a low leakage current density of ∼1 × 10(-7) A cm(-2) at 2 V and a large areal capacitance of 560 nF cm(-2) with the corresponding dielectric constant of 27. Finally, low-voltage flexible organic thin-film transistors were successfully demonstrated by incorporating this versatile solution-processed oxide dielectric material into pentacene transistors on polyimide substrates.
在本信函中，我们报道了通过对溶胶-凝胶法制备的二氧化钛（TiO₂）薄膜的微观结构进行明智控制，可以生成高性能绝缘薄膜，TiO₂通常被认为是宽带隙半导体。由23纳米厚的TiO₂介电层制成的最终器件在2伏电压下表现出约1×10⁻⁷安/平方厘米的低漏电流密度以及560纳法/平方厘米的大面积电容，相应的介电常数为27。最后，通过将这种通用的溶液法制备的氧化物介电材料引入聚酰亚胺基板上的并五苯晶体管中，成功展示了低电压柔性有机薄膜晶体管。
