Department of Chemistry, and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA.
J Am Chem Soc. 2010 Dec 15;132(49):17426-34. doi: 10.1021/ja107079d. Epub 2010 Nov 18.
We report here on the design, synthesis, processing, and dielectric properties of novel cross-linked inorganic/organic hybrid blend (CHB) dielectric films which enable low-voltage organic thin-film transistor (OTFT) operation. CHB thin films (20-43 nm thick) are readily fabricated by spin-coating a zirconium chloride precursor plus an α,ω-disilylalkane cross-linker solution in ambient conditions, followed by curing at low temperatures (~150 °C). The very smooth CHB dielectrics exhibit excellent insulating properties (leakage current densities ~10(-7) A/cm(2)), tunable capacitance (95-365 nF/cm(2)), and high dielectric constants (5.0-10.2). OTFTs fabricated with pentacene as the organic semiconductor function well at low voltages (<-4.0 V). The morphologies and microstructures of representative semiconductor films grown on CHB dielectrics prepared with incrementally varied compositions and processing conditions are investigated and shown to correlate closely with the OTFT response.
我们在此报告一种新型交联无机/有机杂化（CHB）介电薄膜的设计、合成、加工和介电性能，这种薄膜可实现低电压有机薄膜晶体管（OTFT）的工作。CHB 薄膜（20-43nm 厚）可通过在环境条件下旋涂氯化锆前体和 α,ω-二硅烷基烷烃交联剂溶液，然后在低温（约 150°C）下固化来轻易地制备。非常光滑的 CHB 电介质具有优异的绝缘性能（漏电流密度~10(-7) A/cm(2)）、可调电容（95-365 nF/cm(2)）和高介电常数（5.0-10.2）。使用五苯作为有机半导体制造的 OTFT 在低电压（<-4.0 V）下工作良好。研究了在 CHB 电介质上生长的具有代表性的半导体薄膜的形态和微结构，这些薄膜是通过逐步改变组成和处理条件制备的，结果表明其与 OTFT 的响应密切相关。
