Tsin Fabien, Venerosy Amélie, Vidal Julien, Collin Stéphane, Clatot Johnny, Lombez Laurent, Paire Myriam, Borensztajn Stephan, Broussillou Cédric, Grand Pierre Philippe, Jaime Salvador, Lincot Daniel, Rousset Jean
1] EDF R&D, 6 quai Watier, 78400 Chatou Cedex, France [2] IRDEP, Institute of Research and Development on Photovoltaic Energy, UMR 7174 CNRS EDF Chimie ParisTech, 6 quai Watier, 78400 Chatou Cedex, France.
1] CNRS, 6 quai Watier, 78400 Chatou Cedex, France [2] IRDEP, Institute of Research and Development on Photovoltaic Energy, UMR 7174 CNRS EDF Chimie ParisTech, 6 quai Watier, 78400 Chatou Cedex, France.
Sci Rep. 2015 Mar 10;5:8961. doi: 10.1038/srep08961.
This paper presents the low cost electrodeposition of a transparent and conductive chlorine doped ZnO layer with performances comparable to that produced by standard vacuum processes. First, an in-depth study of the defect physics by ab-initio calculation shows that chlorine is one of the best candidates to dope the ZnO. This result is experimentally confirmed by a complete optical analysis of the ZnO layer deposited in a chloride rich solution. We demonstrate that high doping levels (>10(20) cm(-3)) and mobilities (up to 20 cm(2) V(-1) s(-1)) can be reached by insertion of chlorine in the lattice. The process developed in this study has been applied on a CdS/Cu(In,Ga)(Se,S)2 p-n junction produced in a pilot line by a non vacuum process, to be tested as solar cell front contact deposition method. As a result efficiency of 14.3% has been reached opening the way of atmospheric production of Cu(In,Ga)(Se,S)2 solar cell.
本文介绍了一种低成本的电沉积透明导电氯掺杂氧化锌层的方法，其性能与标准真空工艺制备的相当。首先，通过从头算计算对缺陷物理进行的深入研究表明，氯是掺杂氧化锌的最佳候选元素之一。通过对在富含氯化物的溶液中沉积的氧化锌层进行完整的光学分析，实验证实了这一结果。我们证明，通过在晶格中插入氯，可以实现高掺杂水平（>10(20) cm(-3)）和迁移率（高达20 cm(2) V(-1) s(-1)）。本研究中开发的工艺已应用于在中试生产线中通过非真空工艺生产的CdS/Cu(In,Ga)(Se,S)2 p-n结，作为太阳能电池正面接触沉积方法进行测试。结果，效率达到了14.3%，为大气环境下生产Cu(In,Ga)(Se,S)2太阳能电池开辟了道路。
