Wang Yutian, Liu Yu, Wang Gang, Anwand Wolfgang, Jenkins Catherine A, Arenholz Elke, Munnik Frans, Gordan Ovidiu D, Salvan Georgeta, Zahn Dietrich R T, Chen Xiaolong, Gemming Sibylle, Helm Manfred, Zhou Shengqiang
1] Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany [2] Technische Universität Dresden, 01062 Dresden, Germany.
1] Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany [2] Research &Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Sci Rep. 2015 Mar 11;5:8999. doi: 10.1038/srep08999.
Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin.
当引入特定缺陷时，铁磁性可在宽带隙半导体以及碳基材料中出现。因此，期望在缺陷与由此产生的铁磁性之间建立直接关系。在此，我们以碳化硅作为典型示例，为揭示缺陷诱导铁磁性的起源做出贡献。我们表明，远程铁磁耦合可归因于VSiVC双空位周围最近邻碳原子的p电子。因此，铁磁性可追溯到其微观电子起源。
