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室温下碳化硅中缺陷自旋量子比特的相干控制。

Room temperature coherent control of defect spin qubits in silicon carbide.

机构信息

Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA.

出版信息

Nature. 2011 Nov 2;479(7371):84-7. doi: 10.1038/nature10562.

Abstract

Electronic spins in semiconductors have been used extensively to explore the limits of external control over quantum mechanical phenomena. A long-standing goal of this research has been to identify or develop robust quantum systems that can be easily manipulated, for future use in advanced information and communication technologies. Recently, a point defect in diamond known as the nitrogen-vacancy centre has attracted a great deal of interest because it possesses an atomic-scale electronic spin state that can be used as an individually addressable, solid-state quantum bit (qubit), even at room temperature. These exceptional quantum properties have motivated efforts to identify similar defects in other semiconductors, as they may offer an expanded range of functionality not available to the diamond nitrogen-vacancy centre. Notably, several defects in silicon carbide (SiC) have been suggested as good candidates for exploration, owing to a combination of computational predictions and magnetic resonance data. Here we demonstrate that several defect spin states in the 4H polytype of SiC (4H-SiC) can be optically addressed and coherently controlled in the time domain at temperatures ranging from 20 to 300 kelvin. Using optical and microwave techniques similar to those used with diamond nitrogen-vacancy qubits, we study the spin-1 ground state of each of four inequivalent forms of the neutral carbon-silicon divacancy, as well as a pair of defect spin states of unidentified origin. These defects are optically active near telecommunication wavelengths, and are found in a host material for which there already exist industrial-scale crystal growth and advanced microfabrication techniques. In addition, they possess desirable spin coherence properties that are comparable to those of the diamond nitrogen-vacancy centre. This makes them promising candidates for various photonic, spintronic and quantum information applications that merge quantum degrees of freedom with classical electronic and optical technologies.

摘要

半导体中的电子自旋被广泛用于探索对量子力学现象的外部控制极限。这项研究的一个长期目标是确定或开发能够轻易操纵的稳健量子系统,以便未来用于先进的信息和通信技术。最近,钻石中的一个点缺陷——氮空位中心引起了极大的兴趣,因为它具有原子尺度的电子自旋态,可以作为可单独寻址的固态量子位(qubit),即使在室温下也是如此。这些卓越的量子特性激发了人们在其他半导体中寻找类似缺陷的努力,因为它们可能提供钻石氮空位中心所不具备的扩展功能。值得注意的是,碳化硅(SiC)中的几个缺陷被认为是很好的探索候选对象,这归因于计算预测和磁共振数据的结合。在这里,我们证明了 4H 型碳化硅(4H-SiC)中的几种缺陷自旋态可以在 20 到 300 开尔文的温度范围内在时域中进行光学寻址和相干控制。我们使用与钻石氮空位量子比特类似的光学和微波技术,研究了四个不等价形式的中性碳硅双空位的自旋-1 基态,以及一对来源不明的缺陷自旋态。这些缺陷在电信波长附近具有光学活性,并且存在于已经存在工业规模晶体生长和先进微加工技术的宿主材料中。此外,它们具有与钻石氮空位中心相当的理想自旋相干特性。这使得它们成为各种光子学、自旋电子学和量子信息应用的有前途的候选对象,这些应用将量子自由度与经典电子和光学技术相结合。

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