用于倒置顶部发射有机发光二极管的采用1,4,5,8,9,11-六氮杂三亚苯六腈/氧化钼的高性能混合缓冲层。

High-performance hybrid buffer layer using 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile/molybdenum oxide in inverted top-emitting organic light-emitting diodes.

作者信息

Park Cheol Hwee, Lee Hyun Jun, Hwang Ju Hyun, Kim Kyu Nyun, Shim Yong Sub, Jung Sun-Gyu, Park Chan Hyuk, Park Young Wook, Ju Byeong-Kwon

机构信息

†Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 136-713, Republic of Korea.

‡The Institute for High Technology Materials and Devices, Korea University, Seoul 136-713, Republic of Korea.

出版信息

ACS Appl Mater Interfaces. 2015 Mar 25;7(11):6047-53. doi: 10.1021/am5091066. Epub 2015 Mar 11.

DOI:10.1021/am5091066

PMID:25761363

Abstract

A high-performance 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HATCN)/molybdenum oxide (MoO3) hybrid buffer layer with high hole-injection efficiency and superior plasma resistance under the sputtering process was developed. The HATCN enhances the hole-injection efficiency, and the MoO3 effectively protects the underlying organic layers from plasma damage during deposition by sputtering. This improves the characteristics of inverted top-emitting organic light-emitting diodes using a top transparent conductive oxide electrode. The device using the hybrid buffer layer showed the highest electroluminescence characteristics among devices with other buffer layers. The high hole-injection efficiency of HATCN was shown by the J-F curve of hole-only devices, and the plasma protection performance of MoO3 was shown by atomic force microscope surface morphology images of the buffer layer film after O2 plasma treatment.

摘要

开发了一种具有高空穴注入效率且在溅射过程中具有优异抗等离子体性能的高性能1,4,5,8,9,11-六氮杂三亚苯六腈（HATCN）/氧化钼（MoO₃）混合缓冲层。HATCN提高了空穴注入效率，而MoO₃在溅射沉积过程中有效地保护了下层有机层免受等离子体损伤。这改善了使用顶部透明导电氧化物电极的倒置顶部发射有机发光二极管的特性。使用该混合缓冲层的器件在具有其他缓冲层的器件中表现出最高的电致发光特性。仅空穴器件的J-F曲线显示了HATCN的高空穴注入效率，而O₂等离子体处理后缓冲层薄膜的原子力显微镜表面形貌图像显示了MoO₃的等离子体保护性能。