Lee Chang Yeong, Le Quyet Van, Kim Cheolmin, Kim Soo Young
School of Chemical Engineering and Materials Science, Chung-Ang University 221, Heukseok-dong, Dongjak-gu, Seoul 156-756, Republic of Korea.
Phys Chem Chem Phys. 2015 Apr 14;17(14):9369-74. doi: 10.1039/c5cp00507h. Epub 2015 Mar 12.
Graphene oxide (GO) and silane-functionalized GO (sGO) sheets obtained through a simple sonication exfoliation method are employed as hole transport layers to improve the efficiency of organic photovoltaic (OPV) cells and organic light-emitting diodes (OLED). GO was functionalized using (3-glycidyl oxypropyl)trimethoxysilane (GPTMS) and triethoxymethylsilane (MTES). The appearance of new peaks in the Fourier-transform infrared spectra of the sGOs indicates the formation of Si-O-C, Si-O-Si, Si-H, and Si-O-C moieties, which provide evidence of the addition of silane to the GO surface. Furthermore, the appearance of Si-O-Si bonds in the synchrotron radiation photoelectron spectra (SRPES) of the MTES-sGO and GPTMS-sGO samples suggests that silane groups were effectively functionalized onto the GO sheets. An OPV cell with GO layers showed a lower performance with a power conversion efficiency (PCE) of 2.06%; in contrast, OPV cells based on GPTMS-sGO and MTES-sGO have PCE values of 3.00 and 3.08%, respectively. The OLED devices based on GPTMS-sGO and MTES-sGO showed a higher maximum luminance efficiency of 13.91 and 12.77 cd A(-1), respectively, than PEDOT:PSS-based devices (12.34 cd A(-1)). The SRPES results revealed that the work functions of GO, GPTMS-sGO, and MTES-sGO were 4.8, 4.9, and 5.0 eV, respectively. Therefore, the increase in the PCE value is attributed to improved band-gap alignment. It is thought that sGO could be used as an interfacial layer in OPV and OLED devices.
通过简单的超声剥离法制备的氧化石墨烯(GO)和硅烷功能化氧化石墨烯(sGO)片材被用作空穴传输层,以提高有机光伏(OPV)电池和有机发光二极管(OLED)的效率。使用(3-缩水甘油氧基丙基)三甲氧基硅烷(GPTMS)和三乙氧基甲基硅烷(MTES)对GO进行功能化。sGO的傅里叶变换红外光谱中出现的新峰表明形成了Si-O-C、Si-O-Si、Si-H和Si-O-C部分,这为硅烷添加到GO表面提供了证据。此外,MTES-sGO和GPTMS-sGO样品的同步辐射光电子能谱(SRPES)中Si-O-Si键的出现表明硅烷基团有效地功能化到了GO片材上。具有GO层的OPV电池性能较低,功率转换效率(PCE)为2.06%;相比之下,基于GPTMS-sGO和MTES-sGO的OPV电池的PCE值分别为3.00%和3.08%。基于GPTMS-sGO和MTES-sGO的OLED器件分别显示出比基于PEDOT:PSS的器件(12.34 cd A(-1))更高的最大发光效率,分别为13.91和12.77 cd A(-1)。SRPES结果表明,GO、GPTMS-sGO和MTES-sGO的功函数分别为4.8、4.9和5.0 eV。因此,PCE值的增加归因于带隙对准的改善。据认为,sGO可作为OPV和OLED器件中的界面层。