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具有氧化石墨烯/ PEDOT:PSS 双层空穴传输层的聚合物体异质结太阳能电池的光伏性能显著提高。

Significantly improved photovoltaic performance in polymer bulk heterojunction solar cells with graphene oxide /PEDOT:PSS double decked hole transport layer.

机构信息

Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, University of Malaya, 50603, Kuala Lumpur, Malaysia.

Centre of Nanotechnology, King Abdulaziz University, Jeddah, 21589, Saudi Arabia.

出版信息

Sci Rep. 2017 Jan 13;7:39555. doi: 10.1038/srep39555.

DOI:10.1038/srep39555
PMID:28084304
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5234008/
Abstract

This work demonstrates the high performance graphene oxide (GO)/PEDOT:PSS doubled decked hole transport layer (HTL) in the PCDTBT:PCBM based bulk heterojunction organic photovoltaic device. The devices were tested on merits of their power conversion efficiency (PCE), reproducibility, stability and further compared with the devices with individual GO or PEDOT:PSS HTLs. Solar cells employing GO/PEDOT:PSS HTL yielded a PCE of 4.28% as compared to either of individual GO or PEDOT:PSS HTLs where they demonstrated PCEs of 2.77 and 3.57%, respectively. In case of single GO HTL, an inhomogeneous coating of ITO caused the poor performance whereas PEDOT:PSS is known to be hygroscopic and acidic which upon direct contact with ITO reduced the device performance. The improvement in the photovoltaic performance is mainly ascribed to the increased charge carriers mobility, short circuit current, open circuit voltage, fill factor, and decreased series resistance. The well matched work function of GO and PEDOT:PSS is likely to facilitate the charge transportation and an overall reduction in the series resistance. Moreover, GO could effectively block the electrons due to its large band-gap of ~3.6 eV, leading to an increased shunt resistance. In addition, we also observed the improvement in the reproducibility and stability.

摘要

这项工作展示了在基于 PCDTBT:PCBM 的本体异质结有机光伏器件中,高度表现的氧化石墨烯(GO)/PEDOT:PSS 双层空穴传输层(HTL)。通过器件的功率转换效率(PCE)、重现性、稳定性等优点对其进行了测试,并与单独使用 GO 或 PEDOT:PSS HTL 的器件进行了比较。采用 GO/PEDOT:PSS HTL 的太阳能电池的 PCE 为 4.28%,而单独使用 GO 或 PEDOT:PSS HTL 的 PCE 分别为 2.77%和 3.57%。在单独使用 GO HTL 的情况下,ITO 的不均匀涂层导致性能不佳,而 PEDOT:PSS 是吸湿性和酸性的,与 ITO 直接接触会降低器件性能。光伏性能的提高主要归因于载流子迁移率、短路电流、开路电压、填充因子的增加以及串联电阻的降低。GO 和 PEDOT:PSS 相匹配的功函数可能有助于电荷传输和串联电阻的整体降低。此外,GO 由于其较大的带隙(约 3.6 eV)而有效地阻挡电子,导致分流电阻增加。此外,我们还观察到重现性和稳定性的提高。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0038/5234008/69b609003bb2/srep39555-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0038/5234008/e69f74f2d9cd/srep39555-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0038/5234008/7040941b9b50/srep39555-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0038/5234008/2cfa91633ce9/srep39555-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0038/5234008/a24cccabdb49/srep39555-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0038/5234008/2d7721af0ec2/srep39555-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0038/5234008/69b609003bb2/srep39555-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0038/5234008/e69f74f2d9cd/srep39555-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0038/5234008/7040941b9b50/srep39555-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0038/5234008/2cfa91633ce9/srep39555-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0038/5234008/a24cccabdb49/srep39555-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0038/5234008/2d7721af0ec2/srep39555-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0038/5234008/69b609003bb2/srep39555-f6.jpg

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