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用于光伏应用的高度均匀且垂直排列的SnO2纳米通道阵列。

Highly uniform and vertically aligned SnO2 nanochannel arrays for photovoltaic applications.

作者信息

Kim Jae-Yup, Kang Jin Soo, Shin Junyoung, Kim Jin, Han Seung-Joo, Park Jongwoo, Min Yo-Sep, Ko Min Jae, Sung Yung-Eun

机构信息

Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Republic of Korea.

出版信息

Nanoscale. 2015 May 14;7(18):8368-77. doi: 10.1039/c5nr00202h.

DOI:10.1039/c5nr00202h
PMID:25779772
Abstract

Nanostructured electrodes with vertical alignment have been considered ideal structures for electron transport and interfacial contact with redox electrolytes in photovoltaic devices. Here, we report large-scale vertically aligned SnO2 nanochannel arrays with uniform structures, without lateral cracks fabricated by a modified anodic oxidation process. In the modified process, ultrasonication is utilized to avoid formation of partial compact layers and lateral cracks in the SnO2 nanochannel arrays. Building on this breakthrough, we first demonstrate the photovoltaic application of these vertically aligned SnO2 nanochannel arrays. These vertically aligned arrays were directly and successfully applied in quasi-solid state dye-sensitized solar cells (DSSCs) as photoanodes, yielding reasonable conversion efficiency under back-side illumination. In addition, a significantly short process time (330 s) for achieving the optimal thickness (7.0 μm) and direct utilization of the anodized electrodes enable a simple, rapid and low-cost fabrication process. Furthermore, a TiO2 shell layer was coated on the SnO2 nanochannel arrays by the atomic layer deposition (ALD) process for enhancement of dye-loading and prolonging the electron lifetime in the DSSC. Owing to the presence of the ALD TiO2 layer, the short-circuit photocurrent density (Jsc) and conversion efficiency were increased by 20% and 19%, respectively, compared to those of the DSSC without the ALD TiO2 layer. This study provides valuable insight into the development of efficient SnO2-based photoanodes for photovoltaic application by a simple and rapid fabrication process.

摘要

具有垂直排列结构的纳米结构电极被认为是光伏器件中电子传输以及与氧化还原电解质进行界面接触的理想结构。在此,我们报道了通过一种改进的阳极氧化工艺制备的具有均匀结构、无横向裂纹的大规模垂直排列的SnO₂纳米通道阵列。在改进工艺中,利用超声处理来避免在SnO₂纳米通道阵列中形成部分致密层和横向裂纹。基于这一突破,我们首次展示了这些垂直排列的SnO₂纳米通道阵列的光伏应用。这些垂直排列的阵列作为光阳极被直接且成功地应用于准固态染料敏化太阳能电池(DSSC)中,在背面光照下产生了合理的转换效率。此外,实现最佳厚度(7.0μm)所需的显著较短的处理时间(330秒)以及阳极氧化电极的直接利用,使得制备过程简单、快速且成本低廉。此外,通过原子层沉积(ALD)工艺在SnO₂纳米通道阵列上涂覆了一层TiO₂壳层,以增强染料负载并延长DSSC中的电子寿命。由于ALD TiO₂层的存在,与没有ALD TiO₂层的DSSC相比,短路光电流密度(Jsc)和转换效率分别提高了20%和19%。这项研究通过简单快速的制备工艺,为开发用于光伏应用的高效SnO₂基光阳极提供了有价值的见解。

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