†IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
‡Department of Physics, Auburn University, Auburn, Alabama 36849, United States.
Nano Lett. 2015 Apr 8;15(4):2391-5. doi: 10.1021/nl5046796. Epub 2015 Mar 30.
The piezoelectronic transistor (PET) has been proposed as a transduction device not subject to the voltage limits of field-effect transistors. The PET transduces voltage to stress, activating a facile insulator-metal transition, thereby achieving multigigahertz switching speeds, as predicted by modeling, at lower power than the comparable generation field effect transistor (FET). Here, the fabrication and measurement of the first physical PET devices are reported, showing both on/off switching and cycling. The results demonstrate the realization of a stress-based transduction principle, representing the early steps on a developmental pathway to PET technology with potential to contribute to the IT industry.
压电晶体管（PET）被提议作为一种转换设备，不受场效应晶体管电压限制。PET 将电压转换为应力，激活简单的绝缘金属转变，从而以比可比的产生场效应晶体管（FET）更低的功率实现兆赫兹级别的开关速度，这与模型预测的一致。在这里，首次报道了第一个物理 PET 器件的制造和测量，展示了开关和循环。结果表明，基于应力的转换原理已经实现，这代表了 PET 技术发展道路上的早期步骤，有可能为 IT 行业做出贡献。
