Zhang Bao, Meng Kang-Kang, Yang Mei-Yin, Edmonds K W, Zhang Hao, Cai Kai-Ming, Sheng Yu, Zhang Nan, Ji Yang, Zhao Jian-Hua, Zheng Hou-Zhi, Wang Kai-You
SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100048, China.
Sci Rep. 2016 Jun 22;6:28458. doi: 10.1038/srep28458.
The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.
铁磁体中磁化翻转的电控制对于未来的自旋电子学应用非常重要。在此，我们报道了混合压电（PZT）/铁磁（Co2FeAl）器件，其中铁磁层中的平面霍尔电压仅由压电电压调节。平面霍尔电压的变化与在压电电压下平面内90°的磁化翻转相关。基于无外部磁场的压电电压控制的Co2FeAl平面霍尔效应器件，展示了室温磁非门和或非门。我们的演示可能会导致利用铁磁材料实现信息存储和处理。
