Department of Chemical Engineering Pohang University of Science and Technology Pohang 790-784 Korea.
Nano Lett. 2015 Apr 8;15(4):2474-84. doi: 10.1021/nl504958e. Epub 2015 Mar 23.
A two-dimensional epitaxial growth template for organic semiconductors was developed using a new method for transferring clean graphene sheets onto a substrate with controlled surface wettability. The introduction of a sacrificial graphene layer between a patterned polymeric supporting layer and a monolayer graphene sheet enabled the crack-free and residue-free transfer of free-standing monolayer graphene onto arbitrary substrates. The clean graphene template clearly induced the quasi-epitaxial growth of crystalline organic semiconductors with lying-down molecular orientation while maintaining the "wetting transparency", which allowed the transmission of the interaction between organic molecules and the underlying substrate. Consequently, the growth mode and corresponding morphology of the organic semiconductors on graphene templates exhibited distinctive dependence on the substrate hydrophobicity with clear transition from lateral to vertical growth mode on hydrophilic substrates, which originated from the high surface energy of the exposed crystallographic planes of the organic semiconductors on graphene. The optical properties of the pentacene layer, especially the diffusion of the exciton, also showed a strong dependency on the corresponding morphological evolution. Furthermore, the effect of pentacene-substrate interaction was systematically investigated by gradually increasing the number of graphene layers. These results suggested that the combination of a clean graphene surface and a suitable underlying substrate could serve as an atomically thin growth template to engineer the interaction between organic molecules and aromatic graphene network, thereby paving the way for effectively and conveniently tuning the semiconductor layer morphologies in devices prepared using graphene.
一种用于有机半导体的二维外延生长模板,通过一种新的方法将清洁的石墨烯片转移到具有受控表面润湿性的基底上。在图案化的聚合物支撑层和单层石墨烯片之间引入牺牲的石墨烯层,使得无裂纹、无残留的自由-standing 单层石墨烯能够转移到任意基底上。清洁的石墨烯模板在保持“润湿性透明性”的同时,明显地诱导了具有平躺分子取向的结晶有机半导体的准外延生长,这允许了有机分子与基底之间相互作用的传递。因此,有机半导体在石墨烯模板上的生长模式和相应的形态对基底疏水性表现出明显的依赖性,在亲水基底上从横向生长模式到垂直生长模式的明显转变,这源于石墨烯上有机半导体暴露的晶面具有高表面能。并通过逐渐增加石墨烯层数来系统地研究了苝层的光学性质,特别是激子的扩散,也表现出对相应形态演变的强烈依赖性。这些结果表明,清洁的石墨烯表面和合适的基底的组合可以作为原子薄的生长模板,来设计有机分子和芳香族石墨烯网络之间的相互作用,从而为在使用石墨烯制备的器件中有效地和方便地调节半导体层形态铺平了道路。