Key Laboratory of In-Fiber Intregrated Optics, Ministry of Education, and College of Science, Harbin Engineering University, Harbin 150001, China.
Nanoscale. 2015 May 21;7(19):8731-8. doi: 10.1039/c5nr00670h.
Nanostructured MoS2 is very promising as an electrocatalyst for hydrogen evolution due to a greater number of active edge sites. However, a very large resistance between basal planes decreases the overall efficiency of hydrogen evolution, and greatly limits its application in industry. Herein we develop a facile strategy to synergistically increase the number of active edge sites and the conductivity of MoS2. MoS2 nanosheet arrays can be grown vertically on a carbon fiber cloth (CFC) substrates by a facile strategy. On the one hand, ammonium fluoride in the reaction system could effectively etch the inert basal plane of the MoS2 nanosheets, leading to the formation of pits in the inert basal plane of the MoS2 nanosheets. Thereby the number of active edge sites is significantly increased. On the other hand, the vertical growth of MoS2 nanosheet arrays on CFCs can significantly decrease the resistance of MoS2-based electrocatalysts. As a result, the MoS2-based electrocatalysts exhibit excellent catalytic activity for hydrogen evolution reactions, with a small Tafel slope and a large cathodic current density. Moreover, the CFC can be repeatedly utilized as a template to grow ultrathin MoS2 nanosheet arrays for HERs. The excellent activity and recyclable utilization, as well as mass production, indicate that the composite has promising applications in industry.
由于具有更多的活性边缘位点，纳米结构 MoS2 作为析氢反应的电催化剂非常有前景。然而，基底平面之间非常大的电阻会降低析氢的整体效率，并极大地限制了其在工业中的应用。在此，我们开发了一种协同增加活性边缘位点数量和 MoS2 电导率的简便策略。可以通过一种简便的策略将 MoS2 纳米片阵列垂直生长在碳纤维布（CFC）基底上。一方面，反应体系中的氟化铵可以有效地刻蚀 MoS2 纳米片的惰性基底平面，从而在 MoS2 纳米片的惰性基底平面上形成凹坑，从而显著增加活性边缘位点的数量。另一方面，CFC 上 MoS2 纳米片阵列的垂直生长可以显著降低基于 MoS2 的电催化剂的电阻。结果表明，基于 MoS2 的电催化剂对析氢反应具有优异的催化活性，具有较小的塔菲尔斜率和较大的阴极电流密度。此外，CFC 可重复用作模板，用于生长超薄 MoS2 纳米片阵列以进行 HERs。优异的活性和可重复利用性以及大规模生产表明，该复合材料在工业中具有广阔的应用前景。
