Zhang W, Zheng W T, Kim J-G, Cui X Q, Li L, Qi J G, Kim Y-J, Song S A
Department of Materials Science, and Key Laboratory of Mobile Materials MOE, and State Key Laboratory of Superhard Materials, Jilin University, Changchun, China.
Computational and Analytical Science Center, Samsung Advanced Institute of Technology, Yongin, South Korea.
J Microsc. 2015 Jul;259(1):10-5. doi: 10.1111/jmi.12242. Epub 2015 Mar 21.
Closely correlating with {200} plane of cubic phase, {103} plane of hexagonal phase of Ge(2)Sb(2)Te(5) plays a crucial role in achieving fast phase change process as well as formation of modulation structures, dislocations and twins in Ge(2)Sb(2)Te(5). The behaviors of {103} plane of hexagonal phase render the phase-change memory process as a nanoscale shape memory.
与立方相的{200}平面密切相关，Ge(2)Sb(2)Te(5)六方相的{103}平面在实现快速相变过程以及Ge(2)Sb(2)Te(5)中调制结构、位错和孪晶的形成方面起着关键作用。六方相{103}平面的行为使相变存储过程成为一种纳米级形状记忆。
