四元氧化物（La，Sr）CoO₃₋δ薄膜的原子层沉积

Atomic layer deposition of quaternary oxide (La,Sr)CoO3-δ thin films.

作者信息

Ahvenniemi E, Matvejeff M, Karppinen M

机构信息

Laboratory of Inorganic Chemistry, Department of Chemistry, Aalto University, P.O. Box 16100, FI-00076 AALTO, Espoo, Finland.

出版信息

Dalton Trans. 2015 May 7;44(17):8001-6. doi: 10.1039/c5dt00436e.

DOI:10.1039/c5dt00436e

PMID:25826428

Abstract

A novel atomic layer deposition (ALD) process was developed for fabricating quaternary cobalt oxide (La1-xSrx)CoO3-δ thin films having the eye on future applications of such films in e.g. solid oxide fuel cell cathodes, oxygen separation membranes or thermocouples. The deposition parameters and the conditions of a subsequent annealing step were systematically investigated, and using the thus optimized parameters the cation stoichiometry in the films could be accurately tuned. The most detailed study was conducted for x = 0.7, i.e. the composition with the highest application potential within the (La1-xSrx)CoO3-δ system.

摘要

开发了一种新型原子层沉积（ALD）工艺，用于制备四元钴氧化物(La1-xSrx)CoO3-δ薄膜，着眼于此类薄膜在例如固体氧化物燃料电池阴极、氧分离膜或热电偶等未来应用。系统研究了沉积参数和后续退火步骤的条件，并使用如此优化的参数，可以精确调整薄膜中的阳离子化学计量比。对x = 0.7进行了最详细的研究，即(La1-xSrx)CoO3-δ体系中具有最高应用潜力的组成。