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电合成高度透明的钴氧化物水氧化催化剂薄膜,采用钴氨基多羧酸配合物。

Electrosynthesis of highly transparent cobalt oxide water oxidation catalyst films from cobalt aminopolycarboxylate complexes.

机构信息

School of Chemistry, Monash University, Victoria, 3800 (Australia); ARC Centre of Excellence for Electromaterials Science (ACES), Monash University, Victoria, 3800 (Australia).

出版信息

ChemSusChem. 2015 Apr 24;8(8):1394-403. doi: 10.1002/cssc.201403188. Epub 2015 Mar 31.

Abstract

Efficient catalysis of water oxidation represents one of the major challenges en route to efficient sunlight-driven water splitting. Cobalt oxides (CoOx ) have been widely investigated as water oxidation catalysts, although the incorporation of these materials into photoelectrochemical devices has been hindered by a lack of transparency. Herein, the electrosynthesis of transparent CoOx catalyst films is described by utilizing cobalt(II) aminopolycarboxylate complexes as precursors to the oxide. These complexes allow control over the deposition rate and morphology to enable the production of thin, catalytic CoOx films on a conductive substrate, which can be exploited in integrated photoelectrochemical devices. Notably, under a bias of 1.0 V (vs. Ag/AgCl), the film deposited from Co(NTA)(OH2 )2 (NTA=nitrilotriacetate) decreased the transmission by only 10 % at λ=500 nm, but still generated >80 % of the water oxidation current produced by a Co(OH2 )6 -derived oxide film whose transmission was only 40 % at λ=500 nm.

摘要

高效的水氧化催化是实现高效阳光驱动水分解的主要挑战之一。钴氧化物 (CoOx ) 已被广泛研究作为水氧化催化剂,尽管这些材料被纳入光电化学器件受到缺乏透明度的限制。本文通过利用钴(II)氨多羧酸配合物作为氧化物前体来描述透明 CoOx 催化剂薄膜的电合成。这些配合物可以控制沉积速率和形态,从而在导电基底上生成薄的催化 CoOx 薄膜,可用于集成光电化学器件。值得注意的是,在 1.0 V(相对于 Ag/AgCl)的偏压下,由 Co(NTA)(OH2 )2 (NTA= 次氮基三乙酸)沉积的薄膜在 λ=500nm 处的透光率仅降低了 10%,但仍产生了超过 80%的由 Co(OH2 )6 衍生的氧化膜产生的水氧化电流,而后者在 λ=500nm 处的透光率仅为 40%。

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