Liu Yong, Xu Wei, Liu Da-Bo, Yu Meijuan, Lin Yuan-Hua, Nan Ce-Wen
AVIC Beijing Institute of Aeronautical Materials, Beijing 100095, China.
Phys Chem Chem Phys. 2015 May 7;17(17):11229-33. doi: 10.1039/c5cp00739a.
Ga doped In2O3-based thermoelectric materials were prepared by spark plasma sintering (SPS) using sintered powders in the low temperature solid phase. The solubility of Ga in In2O3 is about 10 at%, much larger than other elements such as Ge, Ce, etc. The larger solubility of Ga allows us to optimize the thermal and electrical transport properties of Ga doped In2O3 in a wider window. While tuning the concentration of dopants, the thermoelectric performance of Ga doped In2O3 was enhanced through a synergistic approach combining band-gap engineering and phonon suppression. The power factor increases from ∼0.5 × 10(-4) to ∼9.6 × 10(-4) W mK(-2) at 700 °C while thermal conductivity reduces from ∼4 to ∼2 W mK(-1) at 700 °C in In1.9Ga0.1O3. The maximum ZT of 0.37, increased by a factor of 4 from the pristine In2O3, is achieved in In1.9Ga0.1O3 at 700 °C.
采用低温固相烧结粉末通过放电等离子烧结（SPS）制备了Ga掺杂的In₂O₃基热电材料。Ga在In₂O₃中的溶解度约为10原子%，远大于Ge、Ce等其他元素。Ga的较大溶解度使我们能够在更宽的范围内优化Ga掺杂In₂O₃的热传输和电传输性能。在调整掺杂剂浓度时，通过结合带隙工程和声子抑制的协同方法提高了Ga掺杂In₂O₃的热电性能。在700℃时，In₁.₉Ga₀.₁O₃的功率因子从0.5×10⁻⁴增加到9.6×10⁻⁴W mK⁻²，而热导率从4降低到2W mK⁻¹。在700℃时，In₁.₉Ga₀.₁O₃的最大ZT值达到0.37，比原始In₂O₃提高了4倍。
