Cai Rong-lin, Cheng Hong-liang, Zhou Ting, Chen Guo-qing, Chen Xing-sheng, Wu Sheng-bing
Zhen Ci Yan Jiu. 2015 Feb;40(1):25-9.
To observe the effect of electroacupuncture (EA) of "Dazhui" (GV 14), "Baihui" (GV 20), etc. on learning-memory ability and expression of vascular endothelial growth factor (VEGF) mRNA, VEGF receptor 1 (VEGFR-1/Flt-1) mRNA, and VEGFR-2 (Flk-1) mRNA in the hippocampus in vascular cognitive impairment (VCI) rats so as to reveal its mechanism underlying improvement of VCI.
A total of 60 Wistar rats were randomly divided into sham operation, VCI model, EA and medication groups (n=12 in each group). The VCI model was established by occlusion of the bilateral vertebral arteries and bilateral cervical arteries. EA (2 Hz/20 Hz) was applied to "Baihui" (GV 20), "Dazhui" (GV 14), "Shuigou" (GV 26) and "Shenting" (GV 24) for 20 min, once daily for 20 days. Rats of the medication group were treated by intragastric perfusion of Aniracetam capsules (0.0625 g/kg),once daily for 20 days. The rats' learning-memory ability was detected by step-down test. The expression levels of VEGF mRNA, Flt-1 mRNA and Flk-1 mRNA in the hippocampus were detected by RT-PCR, and the neurological deficit scores were assessed by Zea Longa (0-4 scaling) method.
Compared with the sham operation group, rats of the model group showed a significant increase in reaction time and error number and decrease of escape latency (reduction of learning-memory ability), and increase in neurological deficit score, and in expression levels of hippocampal VEGF mRNA, Flt-1 mRNA and Flk-1 mRNA (all P<0.01). After EA treatment, in comparison with the model group, the learning-memory ability and hippocampal VEGF mRNA, Flt-1 mRNA and Flk-1 mRNA were apparently increased, neurological deficit score were markedly decreased in the EA group (all P<0.01). The effects of EA treatment was obviously superior to those of medication in raising learning-memory ability and up-regulating hippocampal VEGF mRNA and Flt-1 mRNA expression levels, and in reducing neurological deficit score (all P<0.05).
EA intervention can apparently up-regulate hippocampal VEGF mRNA, Flt-1 mRNA and Flk-1 mRNA expression in VCI rats, which may contribute to its effect in improving learning-memory ability, possibly by promoting neovasculization.
观察电针“大椎”（GV 14）、“百会”（GV 20）等穴位对血管性认知障碍（VCI）大鼠学习记忆能力及海马组织中血管内皮生长因子（VEGF）mRNA、VEGF受体1（VEGFR-1/Flt-1）mRNA和VEGFR-2（Flk-1）mRNA表达的影响，以揭示其改善VCI的作用机制。
将60只Wistar大鼠随机分为假手术组、VCI模型组、电针组和药物组（每组12只）。采用双侧椎动脉及双侧颈总动脉结扎法制备VCI模型。电针组取“百会”（GV 20）、“大椎”（GV 14）、“水沟”（GV 26）、“神庭”（GV 24），用2 Hz/20 Hz频率电针刺激20 min，每日1次，连续20天。药物组大鼠灌胃给予阿尼西坦胶囊（0.0625 g/kg），每日1次，连续20天。采用跳台试验检测大鼠学习记忆能力；采用RT-PCR法检测海马组织中VEGF mRNA、Flt-1 mRNA和Flk-1 mRNA表达水平；采用Zea Longa（0～4分）法评定神经功能缺损评分。
与假手术组比较，模型组大鼠反应时间和错误次数显著增加，逃避潜伏期缩短（学习记忆能力下降），神经功能缺损评分增加，海马组织中VEGF mRNA、Flt-1 mRNA和Flk-1 mRNA表达水平升高（均P<0.01）。与模型组比较，电针组大鼠学习记忆能力及海马组织中VEGF mRNA、Flt-1 mRNA和Flk-1 mRNA表达明显升高，神经功能缺损评分明显降低（均P<0.01）。电针组在提高大鼠学习记忆能力、上调海马组织中VEGF mRNA和Flt-1 mRNA表达水平及降低神经功能缺损评分方面，其效果明显优于药物组（均P<0.05）。
电针干预可明显上调VCI大鼠海马组织中VEGF mRNA、Flt-1 mRNA和Flk-1 mRNA表达，这可能是其改善学习记忆能力的作用机制，可能与促进血管新生有关。
