Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK.
Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas, 77843-3128, USA.
Adv Mater. 2015 May 20;27(19):3079-84. doi: 10.1002/adma.201405147. Epub 2015 Apr 7.
A highly unconventional bias-dependent tunnel magnetoresistance (TMR) response is observed in Sm0.75 Sr0.25 MnO3 -based nanopillar spin filter tunnel junctions (SFTJs) with two different behaviors in two different thickness regimes of the barrier layer. Thinner barrier devices exhibit conventional SFTJ behaviors; however, for larger barrier thicknesses, the TMR-bias dependence is more complex and reverses sign at higher bias.
在具有两种不同势垒层厚度的 Sm0.75 Sr0.25 MnO3 基纳米柱自旋过滤隧道结（SFTJ）中观察到一种非常非传统的与偏压相关的隧道磁电阻（TMR）响应，在两种不同的势垒层厚度范围内表现出两种不同的行为。较薄势垒器件表现出传统的 SFTJ 行为；然而，对于较大的势垒厚度，TMR-偏压相关性更加复杂，并且在更高的偏压下反转符号。
