• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

对称控制的SrRuO/SrTiO/SrRuO磁性隧道结:自旋极化及其与隧道磁电阻的相关性。

Symmetry-controlled SrRuO/SrTiO/SrRuOmagnetic tunnel junctions: spin polarization and its relevance to tunneling magnetoresistance.

作者信息

Samanta Kartik, Tsymbal Evgeny Y

机构信息

Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588, United States of America.

出版信息

J Phys Condens Matter. 2024 Sep 11;36(49). doi: 10.1088/1361-648X/ad765f.

DOI:10.1088/1361-648X/ad765f
PMID:39258556
Abstract

Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully crystalline MTJs where spin-dependent tunneling is controlled by the symmetry group of wave vector. In this work, using first-principles quantum-transport calculations, we explore spin-dependent tunneling in fully crystalline SrRuO/SrTiO/SrRuO(001) MTJs and predict tunneling magnetoresistance (TMR) of nearly 3000%. We demonstrate that this giant TMR effect is driven by symmetry matching (mismatching) of the incoming and outcoming Bloch states in the SrRuO(001) electrodes and evanescent states in the SrTiO(001) barrier. We argue that under the conditions of symmetry-controlled transport, spin polarization, whatever definition is used, is not a relevant measure of spin-dependent tunneling. In the presence of diffuse scattering, however, e.g. due to localized states in the band gap of the tunnel barrier, symmetry matching is no longer valid and TMR in SrRuO/SrTiO/SrRuO(001) MTJs is strongly reduced. Under these conditions, the spin polarization of the interface transmission function becomes a valid measure of TMR. These results provide an important insight into understanding and optimizing TMR in all-oxide MTJs.

摘要

磁隧道结(MTJs)由两个被绝缘势垒层隔开的铁磁电极组成,具有与自旋相关隧穿相关的重要基本特性。特别有趣的是完全结晶的MTJs,其中自旋相关隧穿由波矢对称群控制。在这项工作中,我们使用第一性原理量子输运计算,探索完全结晶的SrRuO/SrTiO/SrRuO(001) MTJs中的自旋相关隧穿,并预测隧穿磁电阻(TMR)接近3000%。我们证明,这种巨大的TMR效应是由SrRuO(001)电极中入射和出射布洛赫态与SrTiO(001)势垒中倏逝态的对称匹配(失配)驱动的。我们认为,在对称控制输运的条件下,无论使用何种定义,自旋极化都不是自旋相关隧穿的相关量度。然而,在存在漫散射的情况下,例如由于隧道势垒带隙中的局域态,对称匹配不再有效,SrRuO/SrTiO/SrRuO(001) MTJs中的TMR会大幅降低。在这些条件下,界面传输函数的自旋极化成为TMR的有效量度。这些结果为理解和优化全氧化物MTJs中的TMR提供了重要见解。

相似文献

1
Symmetry-controlled SrRuO/SrTiO/SrRuOmagnetic tunnel junctions: spin polarization and its relevance to tunneling magnetoresistance.对称控制的SrRuO/SrTiO/SrRuO磁性隧道结:自旋极化及其与隧道磁电阻的相关性。
J Phys Condens Matter. 2024 Sep 11;36(49). doi: 10.1088/1361-648X/ad765f.
2
Spin-dependent tunneling in magnetic tunnel junctions with a layered antiferromagnetic Cr(001) spacer: role of band structure and interface scattering.具有层状反铁磁Cr(001)间隔层的磁性隧道结中的自旋相关隧穿:能带结构和界面散射的作用。
Phys Rev Lett. 2005 Aug 19;95(8):086602. doi: 10.1103/PhysRevLett.95.086602. Epub 2005 Aug 15.
3
Ferromagnetic barrier induced large enhancement of tunneling magnetoresistance in van der Waals perpendicular magnetic tunnel junctions.铁磁势垒在范德华垂直磁隧道结中诱导隧穿磁电阻大幅增强。
Nanoscale. 2021 Dec 13;13(47):19993-20001. doi: 10.1039/d1nr04692f.
4
Spin-Dependent Transport in van der Waals Magnetic Tunnel Junctions with FeGeTe Electrodes.具有FeGeTe电极的范德华磁性隧道结中的自旋相关输运。
Nano Lett. 2019 Aug 14;19(8):5133-5139. doi: 10.1021/acs.nanolett.9b01506. Epub 2019 Jul 9.
5
Tunable Tunneling Magnetoresistance in van der Waals Magnetic Tunnel Junctions with 1-CrTe Electrodes.具有1-CrTe电极的范德华磁性隧道结中的可调谐隧道磁电阻
ACS Appl Mater Interfaces. 2021 Jan 13;13(1):1214-1221. doi: 10.1021/acsami.0c17829. Epub 2020 Dec 30.
6
Magnetoresistance in Co-hBN-NiFe Tunnel Junctions Enhanced by Resonant Tunneling through Single Defects in Ultrathin hBN Barriers.钴/六方氮化硼-镍铁隧道结中的磁电阻增强通过超薄六方氮化硼势垒中单缺陷的共振隧穿。
Nano Lett. 2018 Nov 14;18(11):6954-6960. doi: 10.1021/acs.nanolett.8b02866. Epub 2018 Oct 31.
7
Crossover from Kondo-assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers.通过氧化镁隧道势垒中的铁磁纳米点,实现从近藤辅助抑制到隧穿磁电阻的共隧穿增强的转变。
Nano Lett. 2008 Jan;8(1):340-4. doi: 10.1021/nl072930n. Epub 2007 Dec 21.
8
Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide composite magnetic tunnel junction.在全氧化物复合磁隧道结中存在巨隧道电阻和磁电阻的共存现象。
Phys Rev Lett. 2012 Nov 30;109(22):226803. doi: 10.1103/PhysRevLett.109.226803.
9
Highly spin-polarized materials and devices for spintronics.用于自旋电子学的高自旋极化材料与器件。
Sci Technol Adv Mater. 2008 Mar 13;9(1):014101. doi: 10.1088/1468-6996/9/1/014101. eCollection 2008 Jan.
10
Interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions.外延Fe/MgO/Fe磁性隧道结的界面表征
J Nanosci Nanotechnol. 2012 Feb;12(2):1006-23. doi: 10.1166/jnn.2012.4257.