Zhi Xintao, Li Xiaopeng, Yuan Songmei, Wang Dasen, Wang Kehong
School of Mechanical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
Materials (Basel). 2024 Jan 19;17(2):470. doi: 10.3390/ma17020470.
The application range of fused silica optical components can be expanded and the cost of fused silica components can be reduced by depositing the same material film on fused silica substrate. However, due to the different manufacturing process, the performance of ALD SiO film is lower than that of fused silica substrate, which also limits the use of this process. In this paper, ALD SiO film with different thicknesses were deposited, and then the structure and properties were tested. Finally, the ALD SiO film was treated via the annealing process. Transmission electron microscopy (TEM) showed that the ALD SiO film had good compactness and substrate adhesion. The Raman spectra showed that the ALD SiO film and substrate had the same structure, with only slight differences. The XRD pattern showed that ALD-fused silica did not crystallize before or after annealing. The infrared spectra showed that there was an obvious Si-OH defect in the ALD SiO film. The laser damage showed that the ALD SiO film had a much lower damage threshold than the fused silica substrate. The nanoindentation showed that the mechanical properties of the ALD SiO film were much lower than those of the fused silica substrate. After a low-temperature annealing treatment, the ALD SiO film Si-OH defect was reduced, the ALD SiO film four-member ring content was increased, the elastic modulus of the ALD SiO film was increased from 45.025 GPa to 68.025 GPa, the hardness was increased from 5.240 GPa to 9.528 GPa, and the ALD SiO film damage threshold was decreased from 5.5 J/cm to 1.3 J/cm.
通过在熔融石英衬底上沉积同种材料薄膜，可以扩大熔融石英光学元件的应用范围并降低其成本。然而，由于制造工艺不同，ALD SiO薄膜的性能低于熔融石英衬底，这也限制了该工艺的使用。本文沉积了不同厚度的ALD SiO薄膜，然后对其结构和性能进行了测试。最后，通过退火工艺对ALD SiO薄膜进行了处理。透射电子显微镜（TEM）显示ALD SiO薄膜具有良好的致密性和与衬底的附着力。拉曼光谱表明ALD SiO薄膜与衬底具有相同的结构，只是存在细微差异。XRD图谱表明ALD-熔融石英在退火前后均未结晶。红外光谱表明ALD SiO薄膜中存在明显的Si-OH缺陷。激光损伤测试表明ALD SiO薄膜的损伤阈值远低于熔融石英衬底。纳米压痕测试表明ALD SiO薄膜的力学性能远低于熔融石英衬底。经过低温退火处理后，ALD SiO薄膜的Si-OH缺陷减少，ALD SiO薄膜的四元环含量增加，ALD SiO薄膜的弹性模量从45.025 GPa增加到68.025 GPa，硬度从5.240 GPa增加到9.528 GPa，并且ALD SiO薄膜的损伤阈值从5.5 J/cm降低到1.3 J/cm。
