Wang Lai-Guo, Qian Xu, Cao Yan-Qiang, Cao Zheng-Yi, Fang Guo-Yong, Li Ai-Dong, Wu Di
National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road, Nanjing, 210093 People's Republic of China ; Anhui Key Laboratory of Functional Coordination Compounds, School of Chemistry and Chemical Engineering, Anqing Normal University, 128 Linghu South Road, Anhui, 246011 People's Republic of China.
National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road, Nanjing, 210093 People's Republic of China.
Nanoscale Res Lett. 2015 Mar 19;10:135. doi: 10.1186/s11671-015-0846-y. eCollection 2015.
We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3/HfO2/Al2O3 after 600°C post-annealing. The memory units of Pt/Al2O3/HfO2/Al2O3/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 10(3) cycles, and longer data retention at 85°C over 10 years. The possible switching mechanism of trilayer structure of Al2O3/HfO2/Al2O3 has been proposed. The trilayer structure device units of Al2O3/HfO2/Al2O3 on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory.
我们通过原子层沉积（ALD）展示了一种具有三层结构的柔性电阻式随机存取存储器单元。该器件单元由涂覆氮化钛（TiN）的硅衬底上基于Al2O3/HfO2/Al2O3的功能堆叠组成。在600°C后退火后，涂覆TiN的硅上Al2O3/HfO2/Al2O3的横截面高分辨率透射电子显微镜（HRTEM）图像和X射线光电子能谱（XPS）深度剖析证实了Al2O3/HfO2/Al2O3三层结构之间界面层的存在。Pt/Al2O3/HfO2/Al2O3/TiN/Si的存储单元表现出典型的双极、可靠且可重复的电阻切换行为，例如关态/开态的稳定电阻比（>10）、设置和重置电压的尖锐分布、高达10(3) 次循环的更好开关耐久性以及在85°C下超过10年的更长数据保持时间。已提出Al2O3/HfO2/Al2O3三层结构可能的切换机制。通过ALD制备的涂覆TiN的硅上Al2O3/HfO2/Al2O3三层结构器件单元可能是基于氧化物的电阻式随机存取存储器的潜在候选者。
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