基于ITO电极的三层HfO/AlO/HfO忆阻器中的多级模拟电阻开关特性

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO/AlO/HfO Based Memristor on ITO Electrode.

作者信息

Mahata Chandreswar, Kang Myounggon, Kim Sungjun

机构信息

School of Electronics Engineering, Chungbuk National University, Cheongju 28644, Korea.

Department of Electronics Engineering, Korea National University of Transportation, Chungju-si 27469, Korea.

出版信息

Nanomaterials (Basel). 2020 Oct 20;10(10):2069. doi: 10.3390/nano10102069.

Atomic layer deposited (ALD) HfO/AlO/HfO tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset stop voltage in bipolar resistive switching. Improved gradual resistive switching was achieved because of the interdiffusion in the HfO/AlO interface where tri-valent Al incorporates with HfO and produces HfAlO. The uniformity in bipolar resistive switching with I/I ratio (>10) and excellent endurance up to >10 cycles was achieved. Multilevel conductance levels in potentiation/depression were realized with constant amplitude pulse train and increasing pulse amplitude. Thus, tri-layer structure-based RRAM can be a potential candidate for the synaptic device in neuromorphic computing.

采用透明氧化铟锡（ITO）透明电极对原子层沉积（ALD）的HfO/AlO/HfO三层电阻式随机存取存储器（RRAM）结构进行了研究。在双极电阻开关中，通过设置电流合规性和复位停止电压，可以控制高度稳定且可靠的多级电导。由于HfO/AlO界面中的相互扩散，实现了改进的渐变电阻开关，其中三价铝与HfO结合并生成HfAlO。实现了具有I/I比（>10）的双极电阻开关的均匀性以及高达>10⁵ 次循环的出色耐久性。通过恒定幅度脉冲序列和增加脉冲幅度实现了增强/抑制中的多级电导水平。因此，基于三层结构的RRAM可能是神经形态计算中突触器件的潜在候选者。