Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, People's Republic of China.
Nanotechnology. 2011 Jun 24;22(25):254028. doi: 10.1088/0957-4484/22/25/254028. Epub 2011 May 16.
The stabilization of the resistive switching characteristics is important to resistive random access memory (RRAM) device development. In this paper, an alternative approach for improving resistive switching characteristics in ZrO(2)-based resistive memory devices has been investigated. Compared with the Cu/ZrO(2)/Pt structure device, by embedding a thin TiO(x) layer between the ZrO(2) and the Cu top electrode, the Cu/TiO(x)-ZrO(2)/Pt structure device exhibits much better resistive switching characteristics. The improvement of the resistive switching characteristics in the Cu/TiO(x)-ZrO(2)/Pt structure device might be attributed to the modulation of the barrier height at the electrode/oxide interfaces.
对于阻变随机存储器（RRAM）器件的发展来说，电阻开关特性的稳定至关重要。在本文中，我们研究了一种改善基于 ZrO2 的电阻存储器器件电阻开关特性的替代方法。与 Cu/ZrO2/Pt 结构器件相比，通过在 ZrO2 和 Cu 顶电极之间嵌入一层薄的 TiO(x) 层，Cu/TiO(x)-ZrO2/Pt 结构器件表现出了更好的电阻开关特性。Cu/TiO(x)-ZrO2/Pt 结构器件电阻开关特性的改善可能归因于对电极/氧化物界面势垒高度的调制。
