Parlavecchio O, Altimiras C, Souquet J-R, Simon P, Safi I, Joyez P, Vion D, Roche P, Esteve D, Portier F
SPEC (UMR 3680 CEA-CNRS), CEA Saclay, 91191 Gif-sur-Yvette, France.
Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France.
Phys Rev Lett. 2015 Mar 27;114(12):126801. doi: 10.1103/PhysRevLett.114.126801. Epub 2015 Mar 25.
We derive fluctuation-dissipation relations for a tunnel junction driven through a resonator displaying strong quantum fluctuations. We find that the fluctuation-dissipation relations derived for classical external drives hold, provided the effect of the circuit's quantum fluctuations is incorporated into the modified nonlinear current voltage characteristics. We also demonstrate that all quantities measured under a time dependent bias can be reconstructed from their values measured under a dc bias using photoassisted tunneling relations. We confirm these predictions by implementing the circuit and measuring the dc current through the junction, its high frequency admittance, and its current noise at the frequency of the resonator.
我们推导了通过呈现强烈量子涨落的谐振器驱动的隧道结的涨落-耗散关系。我们发现，只要将电路的量子涨落效应纳入修正的非线性电流-电压特性中，为经典外部驱动推导的涨落-耗散关系就成立。我们还证明，在随时间变化的偏置下测量的所有量都可以利用光辅助隧穿关系从在直流偏置下测量的值重建出来。我们通过实现该电路并测量通过结的直流电流、其高频导纳以及在谐振器频率下的电流噪声来证实这些预测。
