Wu Qinke, Jang Sung Kyu, Park Sangwoo, Jung Seong Jun, Suh Hwansoo, Lee Young Hee, Lee Sungjoo, Song Young Jae
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 440-746, Korea.
Nanoscale. 2015 May 7;7(17):7574-9. doi: 10.1039/c5nr00889a.
We describe the successful in situ chemical vapor deposition synthesis of a graphene-based heterostructure in which a graphene monolayer is protected by top and bottom boron nitride films. The boron nitride film/graphene monolayer/boron nitride film (BGB) was found to be a mechanically robust and chemically inert heterostructure, from which the deleterious effects of mechanical transfer processes and unwanted chemical doping under air exposure were eliminated. The chemical compositions of each film layer were monitored ex situ using UV-visible absorption spectroscopy and X-ray photoelectron spectroscopy, and the crystalline structures were confirmed using transmission electron microscopy and selected-area electron diffraction measurements. The performance of the devices fabricated using the BGB film was monitored over six months and did not display large changes in the mobility or the Dirac point, unlike the conventional graphene devices prepared on a SiO2 substrate. The in situ-grown BGB film properties suggest a novel approach to the fabrication of commercial-grade graphene-based electronic devices.
我们描述了一种基于石墨烯的异质结构的成功原位化学气相沉积合成方法，其中石墨烯单层由顶部和底部的氮化硼薄膜保护。发现氮化硼薄膜/石墨烯单层/氮化硼薄膜（BGB）是一种机械坚固且化学惰性的异质结构，消除了机械转移过程的有害影响以及空气暴露下不需要的化学掺杂。使用紫外可见吸收光谱和X射线光电子能谱对各薄膜层的化学成分进行了非原位监测，并使用透射电子显微镜和选区电子衍射测量确认了晶体结构。与在SiO2衬底上制备的传统石墨烯器件不同，使用BGB薄膜制造的器件性能在六个月内得到监测，迁移率或狄拉克点没有显示出大的变化。原位生长的BGB薄膜特性为商业级基于石墨烯的电子器件制造提供了一种新方法。
