Jang Sung Kyu, Youn Jiyoun, Song Young Jae, Lee Sungjoo
SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 440-746, South Korea.
Department of Physics, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 440-746, South Korea.
Sci Rep. 2016 Jul 26;6:30449. doi: 10.1038/srep30449.
Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critical thickness of 10 nm) was grown beyond a critical partial pressure. An interesting coincidence of a critical thickness of 10 nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the CVD h-BN film depended significantly on the film growth mode and the resultant film quality.
作为前驱体分压的函数，比较了大面积六方氮化硼（h-BN）薄膜的两种不同生长模式，即传统化学气相沉积（CVD）生长模式和高压CVD生长模式。在硼嗪前驱体的临界分压以下可实现传统的自限性CVD生长，而在临界分压以上则生长出厚的h-BN层（厚度大于10nm的临界厚度）。在CVD生长行为以及击穿电场强度和漏电流机制中都发现了10nm临界厚度这一有趣的巧合，表明CVD h-BN薄膜的电学性能显著取决于薄膜生长模式和所得薄膜质量。
