†Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
§Institute of Applied Mechanics, Zhejiang University, Hangzhou, Zhejiang 310027, China.
ACS Appl Mater Interfaces. 2015 May 13;7(18):9702-8. doi: 10.1021/acsami.5b01474. Epub 2015 Apr 29.
The intrinsic p-type behavior of graphene field-effect transistors (FETs) under ambient conditions poses a fundamental challenge for the assembly of complex electronic devices, such as integrated circuits. In this work, we present a protocol for tunable n-type doping of graphene FETs via poly(vinyl alcohol) (PVA) coating. Using graphene grown by alcohol catalytic chemical vapor deposition, functionalization of the surface by this hydroxyl anion-rich polymer results in an evolution of the FETs from p-type to ambipolar or n-type even under ambient air conditions. The doping level of graphene is strongly related to the PVA film coating parameters, such as solution concentration, hardening temperature, and hardening time. This PVA coating proves to be a simple and stable approach to tuning the Dirac point and doping level of graphene, which is highly desirable and of great significance for the future of graphene-based electronic devices.
在环境条件下，石墨烯场效应晶体管（FET）的固有 p 型行为对复杂电子设备（如集成电路）的组装构成了根本性挑战。在这项工作中，我们提出了一种通过聚乙烯醇（PVA）涂层实现石墨烯 FET 可调谐 n 型掺杂的方案。使用通过醇催化化学气相沉积生长的石墨烯，通过这种富含羟基阴离子的聚合物对表面进行功能化，导致 FET 从 p 型转变为双极或 n 型，即使在环境空气条件下也是如此。石墨烯的掺杂水平与 PVA 膜涂层参数密切相关，例如溶液浓度、硬化温度和硬化时间。这种 PVA 涂层被证明是一种简单而稳定的方法，可以调整石墨烯的狄拉克点和掺杂水平，这对于基于石墨烯的电子设备的未来是非常理想和重要的。
