Wang Lin, Wei Guodong, Gao Fengmei, Li Chengming, Yang Weiyou
School of Materials Science and Engineering, University of Science & Technology Beijing, Beijing City, 100083, P.R. China.
Nanoscale. 2015 May 7;7(17):7585-92. doi: 10.1039/c5nr00952a.
Current emission stability is one of the key issues for field emitters for them to be practically applied as electron sources. In the present work, large-scale and well-aligned B-doped SiC nanoneedle arrays have been grown on 6H-SiC wafer substrates via pyrolysis of polymeric precursors. The measured field emission (FE) characteristics suggest that the turn-on fields of the as-synthesized SiC nanoneedle arrays are reduced from 1.92 to 0.98 V μm(-1) with temperature increasing from room temperature (RT) to 500 °C, suggesting their excellent FE performances. The slightly changed current fluctuations (only ∼1.3%) between RT and 200 °C confirm that the present SiC nanoarrays with B dopants could be highly stable field emitters to be used in service under harsh conditions of high temperatures.
当前发射稳定性是场发射体实际用作电子源的关键问题之一。在本工作中，通过聚合物前驱体的热解在6H-SiC晶圆衬底上生长了大规模且排列良好的B掺杂SiC纳米针阵列。测量的场发射（FE）特性表明，随着温度从室温（RT）升高到500°C，合成的SiC纳米针阵列的开启场从1.92 V μm⁻¹降低到0.98 V μm⁻¹，表明其优异的场发射性能。在室温与200°C之间电流波动略有变化（仅约1.3%），这证实了目前含有B掺杂剂的SiC纳米阵列可能是在高温苛刻条件下使用的高度稳定的场发射体。
