Xiao Jianfeng, Zhao Jiuzhou, Liu Guanjiang, Cole Mattew Thomas, Zhou Shenghan, Chen Ke, Liu Xinchuan, Li Zhenjun, Li Chi, Dai Qing
Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou 450001, China.
CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China.
Nanomaterials (Basel). 2021 Nov 11;11(11):3025. doi: 10.3390/nano11113025.
Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a simple, industry-familiar reactive ion etching to fabricate well-aligned, vertically orientated SiC nanoarrays on 4H-SiC wafers. The as-synthesized nanoarrays had tapered base angles >60°, and were vertically oriented with a high packing density >10 mm and high-aspect ratios of approximately 35. As a result of its high geometry uniformity-5% length variation and 10% diameter variation, the field emitter array showed typical turn-on fields of 4.3 V μm and a high field-enhancement factor of ~1260. The 8 h current emission stability displayed a mean current fluctuation of 1.9 ± 1%, revealing excellent current emission stability. The as-synthesized emitters demonstrate competitive emission performance that highlights their potential in a variety of vacuum electronics applications. This study provides a new route to realizing scalable field electron emitter production.
碳化硅（SiC）纳米结构因其高击穿场强、高导热性、低电子亲和势和高电子迁移率而成为一种很有前景的场发射体。然而，由于其化学惰性，SiC纳米尖端阵列的制造具有挑战性。在此，我们报道一种简单且为行业所熟知的反应离子蚀刻方法，用于在4H-SiC晶片上制备排列良好、垂直取向的SiC纳米阵列。所合成的纳米阵列具有大于60°的锥形底角，垂直取向，堆积密度大于10 mm，高宽比约为35。由于其高度的几何均匀性（长度变化5%，直径变化10%），场发射体阵列显示出典型的开启场为4.3 V/μm，场增强因子约为1260。8小时的电流发射稳定性显示平均电流波动为1.9±1%，表明具有出色的电流发射稳定性。所合成的发射体展现出具有竞争力的发射性能，突显了它们在各种真空电子应用中的潜力。这项研究为实现可扩展的场电子发射体生产提供了一条新途径。
