Wang Xing, Liu Hong-Xia, Fei Chen-Xi, Yin Shu-Ying, Fan Xiao-Jiao
Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, No. 2, South Taibai Road, Yanta Zone, Xi'an City, Shaanxi Province 710071 People's Republic of China.
Nanoscale Res Lett. 2015 Mar 19;10:141. doi: 10.1186/s11671-015-0842-2. eCollection 2015.
In this study, the physical and electrical characteristics of Al2O3/La2O3/Al2O3/Si stack structures affected by the thickness of an Al2O3 barrier layer between Si substrate and La2O3 layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary ion mass spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS) tests indicate that an Al2O3 barrier layer (15 atomic layer deposition (ALD) cycles, approximately 1.5 nm) plays an important role in suppressing the diffusion of silicon atoms from Si substrate into the La2O3 layer during the annealing process. As a result, some properties of La2O3 dielectric degenerated by the diffusion of Si atoms are improved. Electrical measurements (C-V, J-V) show that the thickness of Al2O3 barrier layer can affect the shift of flat band voltage (V FB) and the magnitude of gate leakage current density.
在本研究中，对经过快速热退火（RTA）处理后，受硅衬底与氧化镧层之间氧化铝阻挡层厚度影响的Al2O3/La2O3/Al2O3/Si叠层结构的物理和电学特性进行了研究。飞行时间二次离子质谱（TOF-SIMS）和X射线光电子能谱（XPS）测试表明，氧化铝阻挡层（15个原子层沉积（ALD）循环，约1.5纳米）在抑制退火过程中硅原子从硅衬底扩散到氧化镧层中起着重要作用。结果，因硅原子扩散而退化的氧化镧电介质的一些性能得到改善。电学测量（C-V、J-V）表明，氧化铝阻挡层的厚度会影响平带电压（VFB）的偏移和栅极泄漏电流密度的大小。
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