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基于原子层沉积法的多层LaO/AlO介电叠层及LaAlO介电薄膜电学性能研究

The Study of Electrical Properties for Multilayer LaO/AlO Dielectric Stacks and LaAlO Dielectric Film Deposited by ALD.

作者信息

Feng Xing-Yao, Liu Hong-Xia, Wang Xing, Zhao Lu, Fei Chen-Xi, Liu He-Lei

机构信息

Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.

出版信息

Nanoscale Res Lett. 2017 Dec;12(1):230. doi: 10.1186/s11671-017-2004-1. Epub 2017 Mar 29.

DOI:10.1186/s11671-017-2004-1
PMID:28359141
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5371537/
Abstract

The capacitance and leakage current properties of multilayer LaO/AlO dielectric stacks and LaAlO dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer LaO/AlO stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO dielectric film, compared with multilayer LaO/AlO dielectric stacks, a clear promotion of trapped charges density (N ) and a degradation of interface trap density (D ) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO dielectric film compared with multilayer LaO/AlO stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer LaO/AlO stack is achieved after annealing at a higher temperature for its less defects.

摘要

本文研究了多层LaO/AlO介电堆栈和LaAlO介电薄膜的电容和漏电流特性。与在600℃进行沉积后退火（PDA）相比，在800℃进行PDA后，多层LaO/AlO堆栈的电容特性得到了明显提升，这表明在较高退火温度下，高k/Si衬底界面处的缺陷和悬空键的复合效果更好。对于LaAlO介电薄膜，与多层LaO/AlO介电堆栈相比，可同时实现俘获电荷密度（N）的明显提升和界面陷阱密度（D）的降低。此外，在相同退火条件下，与多层LaO/AlO堆栈相比，LaAlO介电薄膜的漏电流特性有显著改善。我们还注意到，多层LaO/AlO堆栈在较高温度下退火后，由于缺陷较少，击穿行为更好。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3daf/5371537/a620488bb2d5/11671_2017_2004_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3daf/5371537/5807d01c10a9/11671_2017_2004_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3daf/5371537/24e71ee70545/11671_2017_2004_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3daf/5371537/da11069c1717/11671_2017_2004_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3daf/5371537/f05c46f116cd/11671_2017_2004_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3daf/5371537/a620488bb2d5/11671_2017_2004_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3daf/5371537/5807d01c10a9/11671_2017_2004_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3daf/5371537/24e71ee70545/11671_2017_2004_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3daf/5371537/da11069c1717/11671_2017_2004_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3daf/5371537/f05c46f116cd/11671_2017_2004_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3daf/5371537/a620488bb2d5/11671_2017_2004_Fig5_HTML.jpg

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