具有超过 15%效率的平面钙钛矿太阳能电池的改良孔界面层。

Improved hole interfacial layer for planar perovskite solar cells with efficiency exceeding 15%.

机构信息

‡College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, China.

出版信息

ACS Appl Mater Interfaces. 2015 May 13;7(18):9645-51. doi: 10.1021/acsami.5b01330. Epub 2015 Apr 29.

DOI:10.1021/acsami.5b01330

PMID:25897754

Abstract

UNLABELLED

Planar structure has been proven to be efficient and convenient in fabricating low-temperature and solution-processing perovkite solar cells (PSCs). Interface control and crystal film growth of organometal halide films are regarded as the most important factors to obtain high-performance PSCs. Herein, we report a solution-processed

PEDOT

PSS-GeO2 composite films by simply incorporating the GeO2 aqueous solution into the

PEDOT

PSS aqueous dispersion as a hole transport layer in planar PSCs. Besides the merits of high conductivity, ambient stability and interface modification of

PEDOT

PSS-GeO2 composite films, the formed island-like GeO2 particles are assumed to act as growing sites of crystal nucleus of perovskite films during annealing. By the seed-mediation of GeO2 particles, a superior CH3NH3PbI(3-x)Cl(x) crystalline film with large-scale domains and good film uniformity was obtained. The resulting PSC device with

PEDOT

PSS-GeO2 composite film as HTL shows a best performance with 15.15% PCE and a fill factor (FF) of 74%. There is a remarkable improvement (∼37%) in PCE, from 9.87% to 13.54% (in average for over 120 devices), compared with the reference pristine

PEDOT

PSS based device.

摘要

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平面结构已被证明在制造低温和溶液处理钙钛矿太阳能电池（PSCs）方面非常有效和方便。有机金属卤化物薄膜的界面控制和晶体膜生长被认为是获得高性能 PSCs 的最重要因素。在此，我们报告了一种通过简单地将 GeO2 水溶液掺入 PEDOT：PSS 水溶液中作为平面 PSCs 中的空穴传输层来制备 PEDOT：PSS-GeO2 复合膜的方法。除了 PEDOT：PSS-GeO2 复合膜具有高导电性、环境稳定性和界面改性的优点外，形成的岛状 GeO2 颗粒被认为在退火过程中充当钙钛矿膜晶核的生长点。通过 GeO2 颗粒的种子介导作用，获得了具有大晶粒和良好膜均匀性的 CH3NH3PbI(3-x)Cl(x) 结晶膜。以 PEDOT：PSS-GeO2 复合膜作为 HTL 的所得 PSC 器件表现出 15.15%的最佳 PCE 和 74%的填充因子（FF）。与参考的原始 PEDOT：PSS 基器件相比，PCE 有了显著提高（约 37%），从 9.87%提高到 13.54%（平均超过 120 个器件）。