Hefei National Laboratory for Physical Sciences at Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China (USTC) , Hefei 230026, China.
ACS Appl Mater Interfaces. 2015 Jan 28;7(3):1439-48. doi: 10.1021/am505387q. Epub 2015 Jan 14.
Copper(II) bromide (CuBr2) salt has been applied to dope poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the hole transport layer (HTL) in polymer solar cells (PSCs), improving dramatically the conductivity of PEDOT:PSS film and consequently the device power conversion efficiency (PCE). Under the optimized doping concentration of CuBr2 of 10 mmol·L(-1), PCE of the CuBr2:PEDOT:PSS HTL-incorporated BHJ-PSC device based on poly[N-9″-hepta-decanyl-2,7-carbazole-alt-5,5- (4',7'-di-2-thienyl-2',1',3'- benzothiadiazole) (PCDTBT) and [6,6]-phenyl C71-butyric acid methyl ester (PC71BM) (PCDTBT:PC71BM) reaches 7.05%, which is improved by ∼20.7% compared to that of the reference device based on pristine PEDOT:PSS HTL (5.84%) and represents the highest PCE for PCDTBT:PC71BM-based PSC devices without an electron transport layer (ETL) reported so far. The dramatic improvement of the conductivity of PEDOT:PSS film is interpreted by the weakening of the Coulombic attractions between PEDOT and PSS components. The work function of CuBr2:PEDOT:PSS slightly increases compared to that of the undoped PEDOT:PSS as inferred from scanning Kelvin probe microscopy (SKPM) measurements, contributing to the improved PCE due to the increases of the open-current voltage (Voc) and fill factor (FF).
二价铜(CuBr2)盐已被用于掺杂聚(3,4-亚乙基二氧噻吩):聚(苯乙烯磺酸盐)(PEDOT:PSS)作为空穴传输层(HTL)在聚合物太阳能电池(PSCs)中,显著提高了 PEDOT:PSS 薄膜的电导率,从而提高了器件的功率转换效率(PCE)。在优化的掺杂浓度下,CuBr2 的掺杂浓度为 10 mmol·L(-1)时,基于聚[N-9″-庚基-2,7-咔唑-alt-5,5-(4',7'-二噻吩-2',1',3' -苯并噻二唑)(PCDTBT)和[6,6]-苯基 C71-丁酸甲酯(PC71BM)(PCDTBT:PC71BM)的 CuBr2:PEDOT:PSS HTL 掺入的 BHJ-PSC 器件的 PCE 达到 7.05%,与基于原始 PEDOT:PSS HTL 的参考器件(5.84%)相比提高了约 20.7%,并且代表了迄今为止报道的无电子传输层(ETL)的基于 PCDTBT:PC71BM 的 PSC 器件的最高 PCE。PEDOT:PSS 薄膜电导率的显著提高是通过削弱 PEDOT 和 PSS 组分之间的库仑吸引力来解释的。从扫描开尔文探针显微镜(SKPM)测量推断,CuBr2:PEDOT:PSS 的功函数略高于未掺杂的 PEDOT:PSS,这有助于提高 PCE,因为开路电压(Voc)和填充因子(FF)增加。