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通过铜(II)溴盐掺杂提高聚合物太阳能电池中 PEDOT:PSS 空穴传输层的电导率。

Improving the conductivity of PEDOT:PSS hole transport layer in polymer solar cells via copper(II) bromide salt doping.

机构信息

Hefei National Laboratory for Physical Sciences at Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China (USTC) , Hefei 230026, China.

出版信息

ACS Appl Mater Interfaces. 2015 Jan 28;7(3):1439-48. doi: 10.1021/am505387q. Epub 2015 Jan 14.

Abstract

Copper(II) bromide (CuBr2) salt has been applied to dope poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the hole transport layer (HTL) in polymer solar cells (PSCs), improving dramatically the conductivity of PEDOT:PSS film and consequently the device power conversion efficiency (PCE). Under the optimized doping concentration of CuBr2 of 10 mmol·L(-1), PCE of the CuBr2:PEDOT:PSS HTL-incorporated BHJ-PSC device based on poly[N-9″-hepta-decanyl-2,7-carbazole-alt-5,5- (4',7'-di-2-thienyl-2',1',3'- benzothiadiazole) (PCDTBT) and [6,6]-phenyl C71-butyric acid methyl ester (PC71BM) (PCDTBT:PC71BM) reaches 7.05%, which is improved by ∼20.7% compared to that of the reference device based on pristine PEDOT:PSS HTL (5.84%) and represents the highest PCE for PCDTBT:PC71BM-based PSC devices without an electron transport layer (ETL) reported so far. The dramatic improvement of the conductivity of PEDOT:PSS film is interpreted by the weakening of the Coulombic attractions between PEDOT and PSS components. The work function of CuBr2:PEDOT:PSS slightly increases compared to that of the undoped PEDOT:PSS as inferred from scanning Kelvin probe microscopy (SKPM) measurements, contributing to the improved PCE due to the increases of the open-current voltage (Voc) and fill factor (FF).

摘要

二价铜(CuBr2)盐已被用于掺杂聚(3,4-亚乙基二氧噻吩):聚(苯乙烯磺酸盐)(PEDOT:PSS)作为空穴传输层(HTL)在聚合物太阳能电池(PSCs)中,显著提高了 PEDOT:PSS 薄膜的电导率,从而提高了器件的功率转换效率(PCE)。在优化的掺杂浓度下,CuBr2 的掺杂浓度为 10 mmol·L(-1)时,基于聚[N-9″-庚基-2,7-咔唑-alt-5,5-(4',7'-二噻吩-2',1',3' -苯并噻二唑)(PCDTBT)和[6,6]-苯基 C71-丁酸甲酯(PC71BM)(PCDTBT:PC71BM)的 CuBr2:PEDOT:PSS HTL 掺入的 BHJ-PSC 器件的 PCE 达到 7.05%,与基于原始 PEDOT:PSS HTL 的参考器件(5.84%)相比提高了约 20.7%,并且代表了迄今为止报道的无电子传输层(ETL)的基于 PCDTBT:PC71BM 的 PSC 器件的最高 PCE。PEDOT:PSS 薄膜电导率的显著提高是通过削弱 PEDOT 和 PSS 组分之间的库仑吸引力来解释的。从扫描开尔文探针显微镜(SKPM)测量推断,CuBr2:PEDOT:PSS 的功函数略高于未掺杂的 PEDOT:PSS,这有助于提高 PCE,因为开路电压(Voc)和填充因子(FF)增加。

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