Department of Chemical Engineering, POSTECH, Pohang 790-784, Korea.
Nanoscale. 2015 May 21;7(19):8748-57. doi: 10.1039/c5nr01025j.
A novel route called thermal replacement reaction was demonstrated for synthesizing eco-friendly ZnO@γ-In2Se3 hetero-structural nanowires on FTO glass by replacing the element cadmium with indium for the first time. The indium layer was coated on the surface of the ZnO nanowires beforehand, then CdSe quantum dots were deposited onto the coated indium layer, and finally the CdSe quantum dots were converted to γ-In2Se3 quantum dots by annealing under vacuum at 350 °C for one hour. The prepared ZnO@γ-In2Se3 hetero-nanostructures exhibit stable photoelectrochemical properties that can be ascribed to the protection of the In2O3 layer between the ZnO nanowire and γ-In2Se3 quantum dots and better photocatalytic performance in the wide wavelength region from 400 nm to nearly 750 nm. This strategy for preparing the ZnO@γ-In2Se3 hetero-nanostructures not only enriches our understanding of the single replacement reaction where the active element cadmium can be replaced with indium, but also opens a new way for the in situ conversion of cadmium-based to eco-friendly indium-based nano-devices.
一种新的热取代反应路线被证明可以用于在 FTO 玻璃上合成环保的 ZnO@γ-In2Se3 异质结构纳米线，该路线首次用铟取代了元素镉。首先在 ZnO 纳米线表面涂覆一层铟层，然后将 CdSe 量子点沉积在涂覆的铟层上，最后在 350°C 的真空中退火 1 小时，将 CdSe 量子点转化为 γ-In2Se3 量子点。所制备的 ZnO@γ-In2Se3 异质纳米结构表现出稳定的光电化学性能，这可以归因于 ZnO 纳米线和 γ-In2Se3 量子点之间的 In2O3 层的保护，以及在 400nm 至近 750nm 的宽波长范围内更好的光催化性能。这种制备 ZnO@γ-In2Se3 异质纳米结构的策略不仅丰富了我们对活性元素镉可以被铟取代的单取代反应的认识，而且为原位转化基于镉的环保铟基纳米器件开辟了一条新途径。
