International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
ACS Nano. 2010 Mar 23;4(3):1596-602. doi: 10.1021/nn9012466.
The synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photoconductive characteristics of In2Se3 individual nanowires are first investigated. The electrical characterization of a single In2Se3 nanowire verifies an intrinsic n-type semiconductor behavior. These single-crystalline In2Se3 nanowires are then assembled in visible-light sensors which demonstrate a fast, reversible, and stable response. The high photosensitivity and quick photoresponse are attributed to the superior single-crystal quality and large surface-to-volume ratio resulting in fewer recombination barriers in nanostructures. These excellent performances clearly demonstrate the possibility of using In2Se3 nanowires in next-generation sensors and detectors for commercial, military, and space applications.
首次通过热蒸发法合成高质量的 In2Se3 纳米线阵列，并研究了 In2Se3 单根纳米线的光电导特性。单根 In2Se3 纳米线的电学特性证实了其本征 n 型半导体行为。然后，将这些单晶 In2Se3 纳米线组装成可见光传感器，该传感器具有快速、可逆和稳定的响应。高灵敏度和快速光响应归因于纳米结构中较少的复合势垒，这是由于单晶质量优越和比表面积大。这些优异的性能清楚地表明，In2Se3 纳米线有可能用于下一代商业、军事和太空应用的传感器和探测器。
