Ravasio Stefano, Momose Takeshi, Fujii Katsushi, Shimogaki Yukihiro, Sugiyama Masakazu, Cavallotti Carlo
†Dipartimento di Chimica, Materiali e Ingegneria Chimica "Giulio Natta", Politecnico di Milano, via Mancinelli 7, 20131 Milano, Italy.
‡Department of Materials Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan.
J Phys Chem A. 2015 Jul 16;119(28):7858-71. doi: 10.1021/acs.jpca.5b01425. Epub 2015 May 11.
The results of a systematic investigation aimed at determining the dominant gas phase chemistry active during GaN MOVPE are reported and discussed in this work. This study was performed developing a thermodynamic database including the most stable GaN gas phase species and a gas phase mechanism that could efficiently describe their interconversion kinetics. The thermodynamic data and the kinetic mechanism were calculated combining density functional theory and ab initio simulations. Structures and vibrational frequencies of reactants and transition states were determined at the M062X/6-311+G(d,p) level, while energies were computed at the ROCBS-QB3 level. Rate constants were calculated using transition state theory using the rigid rotor - harmonic oscillator approximation and considering the possible degeneration of internal motions in torsional rotations. The thermodynamic analysis indicated that the Ga gas phase species formed in the highest concentration at the standard GaN deposition temperature (1300 K) is GaNH2, followed by GaH and Ga. The diatomic GaN gas phase species, often considered to be the main precursor to the film growth, is predicted to be unstable with respect to GaNH2. Among the gas phase species containing two Ga atoms, the most stable are GaNHGaH(NH2)3, GaNHGaH2(NH2)2, and GaNHGa(NH2)4, thus indicating that the substitution of the methyl groups of the precursor with H or amino groups is thermodynamically favored. Several kinetic routes leading to the formation of these species were examined. It was found that the condensation of Ga(R1)x(R2)3-x species, with R1 and R2 being either CH3, NH2, or H, is a fast process, characterized by the formation of a precursor state whose decomposition to products requires overcoming submerged energy barriers. It is suggested that these species play a key role in the formation of the first GaN nuclei, whose successive growth leads to the formation of GaN powders. A kinetic analysis performed using a fluid dynamic model allowed us to identify the main reactive routes of this complex system.
本文报道并讨论了一项旨在确定氮化镓金属有机气相外延(MOVPE)过程中占主导地位的气相化学反应的系统研究结果。本研究通过开发一个热力学数据库进行,该数据库包含最稳定的氮化镓气相物种以及一个能够有效描述其相互转化动力学的气相机制。结合密度泛函理论和从头算模拟计算了热力学数据和动力学机制。反应物和过渡态的结构及振动频率在M062X/6 - 311 + G(d,p)水平上确定,而能量在ROCBS - QB3水平上计算。速率常数使用过渡态理论,采用刚性转子 - 谐振子近似,并考虑扭转旋转中内部运动的可能简并性来计算。热力学分析表明,在标准氮化镓沉积温度(1300 K)下形成浓度最高的镓气相物种是GaNH₂,其次是GaH和Ga。通常被认为是薄膜生长主要前驱体的双原子氮化镓气相物种,预计相对于GaNH₂是不稳定的。在含有两个镓原子的气相物种中,最稳定的是GaNHGaH(NH₂)₃、GaNHGaH₂(NH₂)₂和GaNHGa(NH₂)₄,这表明前驱体中的甲基被氢或氨基取代在热力学上是有利的。研究了导致这些物种形成的几条动力学途径。发现Ga(R₁)ₓ(R₂)₃₋ₓ物种(其中R₁和R₂为CH₃、NH₂或H)的缩合是一个快速过程,其特征是形成一种前驱体状态,该状态分解为产物需要克服潜在的能垒。建议这些物种在第一个氮化镓核的形成中起关键作用,其连续生长导致氮化镓粉末的形成。使用流体动力学模型进行的动力学分析使我们能够确定这个复杂系统的主要反应途径。